Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
General Description
Features
The AP2121 series are positive voltage regulator ICs
fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit
circuit for current protection and a chip-enable circuit
(5-pin products only).
·
·
·
·
·
The AP2121 series feature high supply voltage ripple
rejection, low dropout voltage, low noise, high output
voltage accuracy, and low current consumption which
make them ideal for use in various battery-powered
devices.
·
·
·
·
·
The AP2121 series have 1.2V, 1.3V, 1.5V, 1.8V, 2.5V,
2.8V, 2.85V, 3.0V, 3.2V and 3.3V versions.
·
The AP2121 are available in standard SOT-23-3, SOT23-5 and CSP-4 packages.
AP2121
Low Dropout Voltage at IOUT=100mA: 150mV
Typical (Except 1.2V, 1.3V and 1.5V Versions)
Low Standby Current: 0.1μA Typical
Low Quiescent Current: 25μA Typical
High Ripple Rejection: 70dB Typical （f=1kHz）
Output Current: More Than 200mA (300mA
Limit)
Extremely Low Noise: 30μVrms (10Hz to
100kHz)
Excellent Line Regulation: 4mV Typical
Excellent Load Regulation: 12mV Typical
High Output Voltage Accuracy: ±2%
Excellent Line Transient Response and Load
Transient Response
Compatible with Low ESR Ceramic Capacitor (as
Low as 1μF)
Applications
·
·
·
·
·
·
SOT-23-3
Mobile Phones, Cordless Phones
Wireless Communication Equipment
Portable Games
Cameras, Video Recorders
Sub-board Power Supplies for Telecom Equipment
Battery Powered Equipment
SOT-23-5
CSP-4
Figure 1. Package Types of AP2121
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Pin Configuration
N Package
(SOT-23-3)
K Package
(SOT-23-5)
VIN
3
1
2
GND
VOUT
J4/J4A Package
(CSP-4 (P 0.5)/CSP-4 (P 0.4))
Pin 1 Mark
VIN
1
GND
2
CE
3
5
VOUT
4
NC
J4C/J4B Package
(CSP-4 (P 0.5)/CSP-4 (P 0.4))
CE
VIN
A1
A2
A1
A2
B1
B2
B1
B2
GND
VOUT
CE
GND
Pin 1 Mark
VIN
VOUT
Figure 2. Pin Configuration of AP2121 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOT-23-3
SOT-23-5
CSP-4
(J4/J4A)
CSP-4
(J4C/J4B)
3
1
A2
A1
VIN
Input voltage
1
2
B1
B2
GND
Ground
3
A1
B1
CE
Active high enable input pin. Logic high=enable,
logic low=shutdown
NC
No connection
4
2
5
B2
A2
VOUT
Dec. 2012 Rev. 2. 6
Regulated output voltage
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Functional Block Diagram
VIN
3
2
VIN
VOUT
1/A2/A1
5/B2/A2
VOUT
VREF
VREF
CURRENT LIMIT
CURRENT LIMIT
1
CE
GND
3/A1/B1
2/B1/B2
GND
SOT-23-5/CSP-4(J4/J4A)/CSP-4(J4C/J4B)
SOT-23-3
Figure 3. Functional Block Diagram of AP2121
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Ordering Information
AP2121
E1: Lead Free
G1: Green
Circuit Type
TR: Tape and Reel
A: Active High
(Pull-down resistor built-in)
Blank: No Enable Function
1.2: Fixed Output 1.2V
1.3: Fixed Output 1.3V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
2.85: Fixed Output 2.85V
3.0: Fixed Output 3.0V
3.2: Fixed Output 3.2V
3.3: Fixed Output 3.3V
Package
N: SOT-23-3
K: SOT-23-5
J4: CSP-4(P 0.5)
J4A: CSP-4 (P 0.4)
J4C: CSP-4(P 0.5)
J4B: CSP-4 (P 0.4)
Package
SOT-23-3
SOT-23-5
Temperature
Range
oC
-40 to 85
-40 to 85oC
Condition
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
AP2121N-1.2TRE1
AP2121N-1.2TRG1
EF9
GF9
Tape & Reel
AP2121N-1.3TRE1
AP2121N-1.3TRG1
EG9
GG9
Tape & Reel
AP2121N-1.5TRE1
AP2121N-1.5TRG1
EF1
GF1
Tape & Reel
AP2121N-1.8TRE1
AP2121N-1.8TRG1
EF3
GF3
Tape & Reel
AP2121N-2.5TRE1
AP2121N-2.5TRG1
EF4
GF4
Tape & Reel
AP2121N-2.8TRE1
AP2121N-2.8TRG1
EF5
GF5
Tape & Reel
AP2121N-3.0TRE1
AP2121N-3.0TRG1
EF6
GF6
Tape & Reel
AP2121N-3.2TRE1
AP2121N-3.2TRG1
EF7
GF7
Tape & Reel
AP2121N-3.3TRE1
AP2121N-3.3TRG1
EF8
GF8
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.2TRE1
AP2121AK-1.2TRG1 E1T
G1T
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.3TRE1
AP2121AK-1.3TRG1 E1R
G1R
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.5TRE1
AP2121AK-1.5TRG1 E1Z
G1Z
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-1.8TRE1
AP2121AK-1.8TRG1 E1U
G1U
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-2.5TRE1
AP2121AK-2.5TRG1 E1V
G1V
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-2.8TRE1
AP2121AK-2.8TRG1 E1W
G1W
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.0TRE1
AP2121AK-3.0TRG1 E1X
G1X
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.2TRE1
AP2121AK-3.2TRG1 E3Z
G3Z
Tape & Reel
Active High (Pull-down resistor built-in) AP2121AK-3.3TRE1
AP2121AK-3.3TRG1 E1Y
G1Y
Tape & Reel
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Ordering Information (Continued)
Package
CSP-4
CSP-4
Temperature
Range
Condition
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
0.4 Pitch
AP2121AJ4A1.2TRG1
CB
Tape & Reel
0.4 Pitch
AP2121AJ4A1.3TRG1
CC
Tape & Reel
0.4 Pitch
AP2121AJ4A1.5TRG1
CD
Tape & Reel
0.4 Pitch
AP2121AJ4A1.8TRG1
CE
Tape & Reel
0.4 Pitch
AP2121AJ4A2.5TRG1
CF
Tape & Reel
0.4 Pitch
AP2121AJ4A2.8TRG1
CG
Tape & Reel
0.4 Pitch
AP2121AJ4A2.85TRG1
DD
Tape & Reel
0.4 Pitch
AP2121AJ4A3.0TRG1
CH
Tape & Reel
0.4 Pitch
AP2121AJ4A3.2TRG1
DA
Tape & Reel
0.4 Pitch
AP2121AJ4A3.3TRG1
DB
Tape & Reel
0.5 Pitch
AP2121AJ41.2TRG1
BA
Tape & Reel
0.5 Pitch
AP2121AJ41.3TRG1
BB
Tape & Reel
0.5 Pitch
AP2121AJ41.5TRG1
BC
Tape & Reel
0.5 Pitch
AP2121AJ41.8TRG1
BD
Tape & Reel
0.5 Pitch
AP2121AJ42.5TRG1
BE
Tape & Reel
0.5 Pitch
AP2121AJ42.8TRG1
BF
Tape & Reel
0.5 Pitch
AP2121AJ42.85TRG1
DC
Tape & Reel
0.5 Pitch
AP2121AJ43.0TRG1
BG
Tape & Reel
0.5 Pitch
AP2121AJ43.2TRG1
BH
Tape & Reel
0.5 Pitch
AP2121AJ43.3TRG1
CA
Tape & Reel
-40 to 85oC
-40 to 85oC
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Ordering Information (Continued)
Package
CSP-4
CSP-4
Temperature
Range
Condition
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
0.4 Pitch
AP2121AJ4B1.2TRG1
DE
Tape & Reel
0.4 Pitch
AP2121AJ4B1.3TRG1
DF
Tape & Reel
0.4 Pitch
AP2121AJ4B1.5TRG1
DG
Tape & Reel
0.4 Pitch
AP2121AJ4B1.8TRG1
DH
Tape & Reel
0.4 Pitch
AP2121AJ4B2.5TRG1
EA
Tape & Reel
0.4 Pitch
AP2121AJ4B2.8TRG1
EB
Tape & Reel
0.4 Pitch
AP2121AJ4B2.85TRG1
EC
Tape & Reel
0.4 Pitch
AP2121AJ4B3.0TRG1
ED
Tape & Reel
0.4 Pitch
AP2121AJ4B3.2TRG1
EE
Tape & Reel
0.4 Pitch
AP2121AJ4B3.3TRG1
EF
Tape & Reel
0.5 Pitch
AP2121AJ4C1.2TRG1
EG
Tape & Reel
0.5 Pitch
AP2121AJ4C1.3TRG1
EH
Tape & Reel
0.5 Pitch
AP2121AJ4C1.5TRG1
FA
Tape & Reel
0.5 Pitch
AP2121AJ4C1.8TRG1
FB
Tape & Reel
0.5 Pitch
AP2121AJ4C2.5TRG1
FC
Tape & Reel
0.5 Pitch
AP2121AJ4C2.8TRG1
FD
Tape & Reel
0.5 Pitch
AP2121AJ4C2.85TRG1
FE
Tape & Reel
0.5 Pitch
AP2121AJ4C3.0TRG1
FF
Tape & Reel
0.5 Pitch
AP2121AJ4C3.2TRG1
FG
Tape & Reel
0.5 Pitch
AP2121AJ4C3.3TRG1
FH
Tape & Reel
-40 to 85oC
-40 to 85oC
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
300
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
Thermal Resistance (Junction to Ambient)
(Note 2)
θJA
o
C
SOT-23-3
250
SOT-23-5
250
CSP-4
126
oC/W
ESD (Human Body Model)
ESD
2000
V
ESD (Machine Model)
ESD
200
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2
6
V
Operating Ambient Temperature Range
TA
-40
85
oC
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics
AP2121-1.2 Electrical Characteristics
(VIN=2.2V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=2.2V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
1.176
1.2
1.224
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=2.2V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
2.2V≤VIN≤6V
IOUT=30mA
4
16
mV
IOUT=10mA
700
900
IOUT=100mA
700
900
IOUT=150mA
700
900
IOUT=200mA
700
900
VIN=2.2V, IOUT=0mA
25
50
μA
1
μA
Dropout Voltage
Quiescent Current
VDROP
IQ
mV
Standby Current
ISTD
VIN=2.2V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=2.2V
70
dB
±120
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-1.3 Electrical Characteristics
(VIN=2.3V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=2.3V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
1.274
1.3
1.326
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=2.3V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
2.3V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
600
800
IOUT=100mA
600
800
IOUT=150mA
600
800
IOUT=200mA
600
800
VIN=2.3V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=2.3V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=2.3V
70
dB
±130
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-1.5 Electrical Characteristics
(VIN=2.5V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=2.5V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
1.47
1.5
1.53
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=2.5V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
2.3V≤VIN≤6V
IOUT=30mA
4
16
mV
IOUT=10mA
400
600
IOUT=100mA
400
600
IOUT=150mA
400
600
IOUT=200mA
400
600
VIN=2.5V, IOUT=0mA
25
50
μA
1
μA
Dropout Voltage
Quiescent Current
VDROP
IQ
mV
Standby Current
ISTD
VIN=2.5V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=2.5V
70
dB
±150
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
10
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-1.8 Electrical Characteristics
(VIN=2.8V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=2.8V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
1.764
1.8
1.836
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=2.8V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
2.3V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=2.8V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=2.8V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=2.8V
70
dB
±180
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
11
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-2.5 Electrical Characteristics
(VIN=3.5V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=3.5V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
2.45
2.5
2.55
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=3.5V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
3V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=3.5V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=3.5V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=3.5V
70
dB
±250
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
12
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-2.8 Electrical Characteristics
(VIN=3.8V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=3.8V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
2.744
2.8
2.856
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=3.8V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
3.3V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=3.8V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=3.8V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=3.8V
70
dB
±280
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
13
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-2.85 Electrical Characteristics
(VIN=3.85V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=3.85V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
2.793
2.85
2.907
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=3.85V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
3.3V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=3.85V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=3.85V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=3.85V
70
dB
±280
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
RPD
Thermal Resistance
(Junction to Case)
θJC
1.5
2.5
CSP-4
V
5
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
oC/W
BCD Semiconductor Manufacturing Limited
14
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-3.0 Electrical Characteristics
(VIN=4V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=4V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
2.94
3.0
3.06
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=4V
1mA≤IOUT≤80mA
12
40
mV
Line Regulation
VRLINE
3.5V≤VIN≤6V
IOUT=30mA
4
16
mV
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=4V, IOUT=0mA
25
50
μA
VIN=4V
VCE in OFF mode
0.1
1
μA
Ripple 0.5Vp-p, f=1kHz
VIN=4V
70
dB
±300
μV/oC
±100
ppm/oC
Dropout Voltage
Quiescent Current
VDROP
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
mV
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
oC/W
BCD Semiconductor Manufacturing Limited
15
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-3.2 Electrical Characteristics
(VIN=4.2V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=4.2V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
3.136
3.2
3.264
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=4.2V
1mA≤ IOUT≤ 80mA
12
40
mV
Line Regulation
VRLINE
3.7V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=4.2V, IOUT=0mA
25
50
μA
1
μA
mV
Standby Current
ISTD
VIN=4.2V
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=4.2V
70
dB
±320
μV/oC
±100
ppm/oC
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=30mA
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
16
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Electrical Characteristics (Continued)
AP2121-3.3 Electrical Characteristics
(VIN=4.3V, TJ=25oC, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Symbol
VOUT
Input Voltage
VIN
Output Current
IOUT
Conditions
VIN=4.3V
1mA≤IOUT≤30mA
VIN-VOUT=1V
Min
Typ
Max
Unit
3.234
3.3
3.366
V
6
V
200
mA
Load Regulation
VRLOAD
VIN=4.3V
1mA≤ IOUT≤ 80mA
12
40
mV
Line Regulation
VRLINE
3.8V≤VIN≤6V
IOUT=30mA
4
16
mV
Dropout Voltage
Quiescent Current
VDROP
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ΔVOUT/ΔT
(ΔVOUT/VOUT)/ΔT
IOUT=10mA
20
40
IOUT=100mA
150
300
IOUT=150mA
200
400
IOUT=200mA
250
500
VIN=4.3V, IOUT=0mA
25
50
μA
VIN=4.3V
VCE in OFF mode
0.1
1
μA
Ripple 0.5Vp-p, f=1kHz
VIN=4.3V
70
dB
±330
μV/oC
±100
ppm/oC
IOUT=30mA
mV
Short Current Limit
ILIMIT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
TA=25oC
10Hz ≤f≤100kHz
30
μVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
CE Pull-down Resistance
Thermal Resistance
(Junction to Case)
RPD
θJC
1.5
2.5
V
5
SOT-23-3
74
SOT-23-5
74
CSP-4
5
Dec. 2012 Rev. 2. 6
0.25
V
10
MΩ
o
C/W
BCD Semiconductor Manufacturing Limited
17
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Typical Performance Characteristics
1.8
1.4
1.6
1.2
0.8
Output Voltage (V)
Output Voltage (V)
1.4
AP2121-1.2
VIN=2V
VIN=2.5V
VIN=3V
1.0
0.6
0.4
1.2
1.0
0.8
0.6
AP2121-1.5
VIN= 2V
0.4
0.2
0.2
0.0
0.0
0
0
50
100
150
200
250
300
VIN= 2.5V
VIN= 4V
50
100
350
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 5. Output Voltage vs. Output Current
Figure 4. Output Voltage vs. Output Current
2.8
2.0
1.8
2.4
1.6
2.0
Output Voltage (V)
Output Voltage (V)
1.4
1.2
1.0
0.8
0.6
AP2121-1.8
VIN= 2.2V
0.4
VIN= 2.8V
0.2
0.0
0
VIN= 4V
50
100
150
200
250
300
1.6
1.2
0.8
AP2121-2.5
VIN= 2.8V
0.4
VIN= 3.5V
0.0
0
350
VIN= 5V
50
100
150
200
250
300
350
Output Current (mA)
Output Current (mA)
Figure 6. Output Voltage vs. Output Current
Figure 7. Output Voltage vs. Output Current
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
18
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
3.5
1.4
3.0
1.2
AP2121-3.0
VIN=3.3V
2.5
Output Voltage (V)
Output Voltage (V)
Typical Performance Characteristics (Continued)
VIN=4V
2.0
VIN=6V
1.5
1.0
0.8
0.6
0.4
0.5
0.0
1.0
AP2121-1.2
IOUT=30mA
0.2
0
50
100
150
200
250
300
0.0
350
0
1
2
Output Current (mA)
3.50
0.6
3.25
0.5
3.00
2.75
2.50
2.00
AP2121-3.0
IOUT=30mA
1
2
3
4
5
6
7
0.4
0.3
5
6
Minimum Operating Requirement
0.2
0.1
0.0
0
4
Figure 9. Output Voltage vs. Input Voltage
Dropout Voltage (V)
Output Voltage (V)
Figure 8. Output Voltage vs. Output Current
2.25
3
Input Voltage (V)
7
Input Voltage (V)
AP2121-1.2
0
40
80
120
160
200
Output Current (mA)
Figure 11. Dropout Voltage vs. Output Current
Figure 10. Output Voltage vs. Input Voltage
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
19
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Typical Performance Characteristics (Continued)
1.210
0.6
1.208
1.206
Output Voltage (V)
Dropout Voltage (V)
0.5
0.4
0.3
0.2
0.1
1.204
1.202
1.200
1.198
1.196
AP2121-1.2
VIN=2.2V
1.194
AP2121-3.0
IOUT=30mA
1.192
0.0
0
40
80
120
160
1.190
200
-25
0
Output Current (mA)
25
50
75
100
125
o
Junction Temperature ( C)
Figure 12. Dropout Voltage vs. Output Current
Figure 13. Output Voltage vs. Junction Temperature
30
3.10
3.08
25
3.04
Supply Current (μA)
Output Voltage (V)
3.06
3.02
3.00
2.98
2.96
2.94
AP2121-3.0
VIN=4V
2.92
IOUT=30mA
2.90
-25
0
25
50
75
100
20
15
10
AP2121-1.2
IOUT=0mA
5
0
125
o
Junction Temperature ( C)
0
1
2
3
4
5
6
7
Input Voltage (V)
Figure 14. Output Voltage vs. Junction Temperature
Figure 15. Supply Current vs. Input Voltage
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
20
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Typical Performance Characteristics (Continued)
40
60
35
50
Supply Current (μA)
Supply Current (μA)
30
40
30
20
0
0
1
2
3
4
5
20
15
AP2121-1.2
VIN=2.2V
10
AP2121-3.0
IOUT=0mA
10
25
IOUT=0mA
5
6
0
7
-25
Input Voltage (V)
0
25
50
75
100
125
o
Junction Temperature ( C)
Figure 16. Supply Current vs. Input Voltage
Figure 17. Supply Current vs. Junction Temperature
40
VIN (1V/Div)
35
25
3.2
2.2
20
ΔVOUT (0.05V/Div)
Supply Current (μA)
30
AP2121-1.2
4.2
15
AP2121-3.0
VIN=4V
10
IOUT=0mA
5
0
-25
0
25
50
75
100
0.05
0
-0.05
125
o
Junction Temperature ( C)
Time (100μs/Div)
Figure 18. Supply Current vs. Junction Temperature
Dec. 2012 Rev. 2. 6
Figure 19. Line Transient
(Conditions: IOUT=30mA, CIN=1μF, COUT=1μF)
BCD Semiconductor Manufacturing Limited
21
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
AP2121-3.0
6
VIN (1V/Div)
5
4
IOUT (100mA/Div)
ΔVOUT (0.05V/Div)
VOUT (0.1V/Div)
Typical Performance Characteristics (Continued)
0.05
0
-0.05
AP2121-1.2
1.3
1.2
1.1
200
100
0
Time (200μs/Div)
Time (20μs/Div)
Figure 21. Load Transient
(Conditions: VIN=2.2V, CIN=1μF, COUT=1μF)
Figure 20. Line Transient
(Conditions: IOUT=30mA, CIN=1μF, COUT=1μF)
3.1
3.0
2.9
PSRR (dB)
IOUT (100mA/Div)
VOUT (0.1V/Div)
100
AP2121-3.0
200
90
AP2121-1.2
VIN=2.2V
80
IOUT=30mA
70
CIN=COUT=1μF
60
50
40
30
100
20
0
10
0
10
100
1k
10k
100k
Frequency (Hz)
Time (200μs/Div)
Figure 22. Load Transient
(Conditions: VIN=4V, CIN=1μF, COUT=1μF)
Figure 23. PSRR vs. Frequency
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
22
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Typical Performance Characteristics (Continued)
100
AP2121-3.0
VIN=4V
90
80
IOUT=30mA
CIN=COUT=1μF
PSRR (dB)
70
60
50
40
30
20
10
0
10
100
1k
10k
100k
Frequency (Hz)
Figure 24. PSRR vs. Frequency
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
23
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Typical Application
AP2121-1.2
VIN=2.2V
VIN
VIN
VOUT=1.2V
VOUT
GND
VOUT
COUT
1μF
CIN
1μF
VIN
AP2121-3.0
VIN=4V
VIN
VOUT=3V
VOUT
VOUT
GND
COUT
NC
CE
1μF
CIN
1μF
Note: Filter capacitors are required at the AP2121's input and output. 1μF capacitor is required at the input. The
minimum output capacitance required for stability should be more than 1μF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.
Figure 25. Typical Application of AP2121
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
24
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Mechanical Dimensions
SOT-23-3
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
1.800(0.071)
2.000(0.079)
0.200(0.008)
0
8
0.300(0.012)
0.500(0.020)
1.450(0.057)
MAX.
0.950(0.037)
TYP
0.300(0.012)
0.600(0.024)
2.650(0.104)
2.950(0.116)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
°
°
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
25
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
26
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Mechanical Dimensions (Continued)
CSP-4 (P 0.4)
Unit: mm(inch)
0. 960(0.038)
1. 060(0.042)
0.400(0.016)
TYP.
0.400(0.016)
TYP.
0.940(0.037)
1.040(0.041)
2
1
B
Pin 1 Mark
0. 550(0.022)
0. 650(0.026)
A
Φ 0.270(0. 011)
TYP.
0. 180(0. 007)
0. 220(0. 009)
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
27
Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
AP2121
Mechanical Dimensions (Continued)
CSP-4 (P 0.5)
Unit: mm(inch)
0. 960(0.038)
1. 060(0.042)
0. 500(0.020)
TYP.
0.500(0.020)
TYP.
0.940(0.037)
1.040(0.041)
2
1
B
Pin 1 Mark
A
Φ0.320(0. 013)
TYP.
0. 600(0. 024)
0. 700(0. 028)
0.215(0. 008)
0.255(0. 010)
Dec. 2012 Rev. 2. 6
BCD Semiconductor Manufacturing Limited
28
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788
