AP2122AK-1.5TRE1

Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit . The AP2122 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. The AP2122 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.2V and 3.3V versions. The AP2122 are available in standard SOT-23-5 package. AP2122 Features · · · · · · · · · · · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.5V Version) Low Standby Current: 0.1µA Typical Low Quiescent Current: 25µA Typical High Ripple Rejection: 70dB Typical（f=10kHz） Maximum Output Current: More Than 150mA (300mA Limit) Extremely Low Noise: 30µVrms (10Hz to 100kHz) Excellent Line Regulation: 4mV Typical Excellent Load Regulation: 12mV Typical High Output Voltage Accuracy: ±2% Excellent Line and Load Transient Response Compatible with Low ESR Ceramic Capacitor (as Low as 1µF) Applications · · · · · · Mobile Phones, Cordless Phones MP3/4 Portable Electronic Devices Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment SOT-23-5 Figure 1. Package Type of AP2122 Sep. 2006 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Pin Configuration AP2122 K Package (SOT-23-5) VOUT GND VIN 1 2 3 5 NC 4 CE Figure 2. Pin Configuration of AP2122 (Top View) Pin Description Pin Number 1 2 3 4 5 Pin Name VOUT GND VIN CE NC Regulated output voltage Ground Input voltage Active high enable input pin. Logic high=enable, logic low=shutdown No connection Function Sep. 2006 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Functional Block Diagram AP2122 VIN 3 1 VOUT VREF CURRENT LIMIT CE 4 2 GND Figure 3. Functional Block Diagram of AP2122 Sep. 2006 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Ordering Information AP2122 AP2122 E1: Lead Free Circuit Type TR: Tape and Reel A: Active High (Pull-down resistor built-in) 1.5: 1.8: 2.5: 2.8: 3.0: 3.2: 3.3: Fixed Output 1.5V Fixed Output 1.8V Fixed Output 2.5V Fixed Output 2.8V Fixed Output 3.0V Fixed Output 3.2V Fixed Output 3.3V Package K: SOT-23-5 Package Temperature Range Condition Part Number Marking ID E2Z E2U E2V E2W E2X E3Y E2Y Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-1.5TRE1 Active High (Pull-down resistor built-in) AP2122AK-1.8TRE1 Active High (Pull-down resistor built-in) AP2122AK-2.5TRE1 SOT-23-5 -40 to 85oC Active High (Pull-down resistor built-in) AP2122AK-2.8TRE1 Active High (Pull-down resistor built-in) AP2122AK-3.0TRE1 Active High (Pull-down resistor built-in) AP2122AK-3.2TRE1 Active High (Pull-down resistor built-in) AP2122AK-3.3TRE1 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Sep. 2006 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Absolute Maximum Ratings (Note 1) Parameter Input Voltage Enable Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance (Note 2) ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TJ TSTG TLEAD θJA ESD ESD Value 6.5 -0.3 to VIN+0.3 300 150 -65 to 150 260 250 2000 200 Unit V V mA oC oC o AP2122 C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ Min 2 -40 Max 6 85 Unit V oC Sep. 2006 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics AP2122-1.5 Electrical Characteristics (VIN=2.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=2.5V 1mA≤IOUT≤80mA 2.3V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=2.5V, IOUT=0mA VIN=2.5V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=2.5V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=2.5V 1mA≤IOUT≤30mA Min 1.47 Typ 1.5 Max 1.53 6 Unit V V mA 150 12 4 400 400 400 25 0.1 70 40 16 600 600 600 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±150 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-1.8 Electrical Characteristics (VIN=2.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=2.8V 1mA≤IOUT≤80mA 2.3V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=2.8V, IOUT=0mA VIN=2.8V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=2.8V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=2.8V 1mA≤IOUT≤30mA Min 1.764 Typ 1.8 Max 1.836 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±180 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-2.5 Electrical Characteristics (VIN=3.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=3.5V 1mA≤IOUT≤80mA 3V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=3.5V, IOUT=0mA VIN=3.5V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=3.5V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=3.5V 1mA≤IOUT≤30mA Min 2.45 Typ 2.5 Max 2.55 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±250 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-2.8 Electrical Characteristics (VIN=3.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=3.8V 1mA≤IOUT≤80mA 3.3V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=3.8V, IOUT=0mA VIN=3.8V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=3.8V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=3.8V 1mA≤IOUT≤30mA Min 2.744 Typ 2.8 Max 2.856 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±280 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-3.0 Electrical Characteristics (VIN=4V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4V 1mA≤IOUT≤80mA 3.5V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=4V, IOUT=0mA VIN=4V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4V IOUT=30mA VOUT=0V TA=25oC 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 150 12 40 Conditions VIN=4V 1mA≤IOUT≤30mA Min 2.94 Typ 3.0 Max 3.06 6 Unit V V mA mV AP2122 Line Regulation 4 20 150 200 25 0.1 70 16 40 300 400 50 1 mV mV µA µA dB µV/oC ppm/oC mA ±300 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 10 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-3.2 Electrical Characteristics (VIN=4.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4.2V 1mA≤ IOUT≤ 80mA 3.7V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=4.2V, IOUT=0mA VIN=4.2V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4.2V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=4.2V 1mA≤IOUT≤30mA Min 3.136 Typ 3.2 Max 3.264 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±320 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 11 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2122-3.3 Electrical Characteristics (VIN=4.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4.3V 1mA≤ IOUT≤ 80mA 3.8V≤VIN≤6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Internal Resistance RPD IQ ISTD PSRR ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE VIN=4.3V, IOUT=0mA VIN=4.3V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4.3V IOUT=30mA VOUT=0V TA=25 C 10Hz ≤f≤100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2122 Conditions VIN=4.3V 1mA≤IOUT≤30mA Min 3.234 Typ 3.3 Max 3.366 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV µA µA dB µV/oC ppm/oC mA ±330 ±100 50 30 µVrms V V MΩ Sep. 2006 Rev. 1. 1 12 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics AP2122 3.5 1.5 3.0 1.2 Output Voltage (V) Output Voltage (V) 2.5 AP2122-3.0 VIN=3.3V VIN=4V VIN=6V 0.9 2.0 1.5 0.6 AP2122-1.5 VIN=2.0V VIN=2.5V VIN=3.0V 1.0 0.3 0.5 0.0 0 50 100 150 200 250 300 350 0.0 0 50 100 150 200 250 300 350 Output Current (mA) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 3.50 1.50 3.25 1.25 Output Voltage (V) Output Voltage (V) 3.00 1.00 2.75 0.75 0.50 2.50 0.25 AP2122-1.5 IOUT=30mA 2.25 AP2122-3.0 IOUT=30mA 0.00 0 1 2 3 4 5 6 7 2.00 0 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 6. Output Voltage vs. Input Voltage Figure 7. Output Voltage vs. Input Voltage Sep. 2006 Rev. 1. 1 13 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2122 0.6 0.6 0.5 0.5 Dropout Voltage (V) Dropout Voltage (V) 0.4 0.4 0.3 Minimum Operating Requirement 0.3 0.2 0.2 0.1 AP2122-1.5 0.1 AP2122-3.0 0.0 0 40 80 120 160 200 0.0 0 40 80 120 160 200 Output Current (mA) Output Current (mA) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 1.60 1.58 1.56 3.10 3.08 3.06 Output Voltage (V) Output Voltage (V) 1.54 1.52 1.50 1.48 1.46 1.44 1.42 1.40 -25 0 25 50 75 o 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 AP2122-1.5 VIN=2.5V IOUT=30mA 100 125 AP2122-3.0 VIN=4V IOUT=30mA -25 0 25 50 75 o 100 125 Junction Temperature ( C) Junction Temperature ( C) Figure 10. Output Voltage vs. Junction Temperature Figure 11. Output Voltage vs. Junction Temperature Sep. 2006 Rev. 1. 1 14 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2122 60 60 50 50 Supply Current (µA) Supply Current (µA) 40 40 30 30 20 20 10 AP2122-1.5 IOUT=0mA 10 AP2122-3.0 IOUT=0mA 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 12. Supply Current vs. Input Voltage Figure 13. Supply Current vs. Input Voltage 40 35 30 25 20 15 10 5 0 -25 0 25 50 75 o 40 35 30 Supply Current (µA) Supply Current (µA) 25 20 15 10 5 0 AP2122-1.5 VIN=2.5V IOUT=0mA AP2122-3.0 VIN=4V IOUT=0mA -25 0 25 50 75 o 100 125 100 125 Junction Temperature ( C) Junction Temperature ( C) Figure 14. Supply Current vs. Junction Temperature Figure 15. Supply Current vs. Junction Temperature Sep. 2006 Rev. 1. 1 15 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2122 5.5 VIN (1V/Div) AP2122-1.5 VIN (1V/Div) 4.5 3.5 2.5 7 6 5 4 AP2122-3.0 ∆VOUT (0.05V/Div) ∆VOUT (0.05V/Div) 0.05 0 -0.05 -0.1 Time (40µs/Div) 0.05 0 -0.05 -0.1 Time (20µs/Div) Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) Figure 17. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) 1.7 VOUT (0.1V/Div) VOUT (0.1V/Div) 1.6 1.5 1.4 AP2122-1.5 3.2 3.1 3.0 2.9 AP2122-3.0 IOUT (100mA/Div) IOUT (50mA/Div) 100 50 0 -50 Time (200µs/Div) 200 100 0 -100 Time (200µs/Div) Figure 18. Load Transient (Conditions: VIN=2.5V, CIN=1µF, COUT=1µF) Figure 19. Load Transient (Conditions: VIN=4V, CIN=1µF, COUT=1µF) Sep. 2006 Rev. 1. 1 16 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2122 100 100 AP2122-1.5 VIN=2.5V 80 90 80 70 AP2122-3.0 VIN=4V IOUT=30mA CIN=COUT=1µF IOUT=30mA CIN=COUT=1µF PSRR (dB) PSRR (dB) 100 1k 10k 100k 1M 60 60 50 40 30 40 20 20 10 0 10 0 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 20. PSRR vs. Frequency Figure 21. PSRR vs. Frequency Sep. 2006 Rev. 1. 1 17 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Application AP2122 VIN =4V AP2122-3.0 VIN GND CE CIN 1µ F VOUT =3V VIN VOUT VOUT NC COUT 1µF Note: Filter capacitors are required at the AP2122's input and output. 1µF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω. Ceramic capacitors are recommended. Figure 22. Typical Application of AP2122 Sep. 2006 Rev. 1. 1 18 BCD Semiconductor Manufacturing Limited Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Mechanical Dimensions SOT-23-5 Unit: mm(inch) AP2122 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.600(0.024) 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0° 8° 1.050(0.041) 1.250(0.049) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Sep. 2006 Rev. 1. 1 19 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A