AP2127K-1.0TRG1

Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 General Description The AP2127 Series are positive voltage regulator ICs fabricated by CMOS process. The AP2127 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2127 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.2V, 4.75V, 5.2V fixed voltage versions and 0.8V to 5.5V adjustable voltage versions. AP2127 series are available in SOT-23-5 Package. Features · · · · · · · · · · · · · Wide Operating Voltage: 2.5V to 6V High Output Voltage Accuracy: ±2% High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz Low Standby Current: 0.1µA Low Dropout Voltage: 170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms@VOUT=0.8V Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2127 Oct. 2009 Rev. 1.3 1 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Pin Configuration K Package (SOT-23-5) VIN GND Shutdown 1 2 3 5 VOUT 4 NC/ADJ Figure 2. Pin Configuration of AP2127 (Top View) Functional Block Diagram SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT GND Figure 3. Functional Block Diagram of AP2127 for Fixed Version Oct. 2009 Rev. 1.3 2 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Functional Block Diagram (Continued) SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT ADJ GND Figure 4. Functional Block Diagram of AP2127 for Adjustable Version Oct. 2009 Rev. 1. 3 3 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Ordering Information AP2127 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 4.2: Fixed Output 4.2V 4.75: Fixed Output 4.75V 5.2: Fixed Output 5.2V Package Temperature Range Part Number AP2127K-ADJTRG1 AP2127K-1.0TRG1 AP2127K-1.2TRG1 AP2127K-1.5TRG1 AP2127K-1.8TRG1 GEH GEG GE1 GEP GEQ GER GES GHF GET GEU GEZ GEW Marking ID Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel SOT-23-5 -40 to 85oC AP2127K-2.5TRG1 AP2127K-2.8TRG1 AP2127K-3.0TRG1 AP2127K-3.3TRG1 AP2127K-4.2TRG1 AP2127K-4.75TRG1 AP2127K-5.2TRG1 BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2009 Rev. 1.3 4 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Absolute Maximum Ratings (Note 1) Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TA TSTG TLEAD θJA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 250 Unit V V mA oC oC o C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TA Min 2.5 -40 Max 6 85 Unit V oC Oct. 2009 Rev. 1. 3 5 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Electrical Characteristics (VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Reference Voltage Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VREF VOUT VIN IOUT(MAX) ∆VOUT /(∆IOUT*VOUT) ∆VOUT /(∆VIN*VOUT) VIN-VOUT=1V, VOUT=0.98×VOUT VIN-VOUT=1V, 1mA≤IOUT≤300mA VOUT+0.5V≤VIN≤6V IOUT=30mA VOUT=1.0V, IOUT=300mA VOUT=1.2V, IOUT=300mA VOUT=1.5V, IOUT=300mA Dropout Voltage VDROP VOUT=1.8V, IOUT=300mA VOUT=2.5V, 2.8V, 3.0V, 3.3V, 4.2V, IOUT=300mA VOUT=4.75V and 5.2V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode f=100Hz AP2127-1.0V to 4.2V, Ripple 1Vp-p f=1kHz VIN=VOUT+1V f=10kHz AP2127-4.75V and f=100Hz 5.2V, Ripple f=1kHz 0.5Vp-p VIN=VOUT+1V f=10kHz IOUT=30mA, -40oC≤TA≤85oC VOUT=0V 1400 1200 900 600 170 140 60 0.1 68 68 54 63 63 45 Conditions VIN=VOUT+1V 1mA≤IOUT≤300mA VIN=VOUT+1V 1mA≤IOUT≤300mA Min 0.784 98%× VOUT 2.5 300 400 0.6 0.06 1500 1300 1000 700 300 300 90 1.0 µA µA dB dB dB dB dB dB ppm/oC mA mV Typ 0.8 Max 0.816 102%× VOUT 6 Unit V V V mA %/A %/V Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Short Current Limit (∆VOUT/VOUT) /∆T ISHORT ±100 50 Oct. 2009 Rev. 1.3 6 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Electrical Characteristics (Continued) (VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance θJC SOT-23-5 Symbol tSS VNOISE TA=25 C, 10Hz ≤f≤100kHz, VOUT=0.8V Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150 o o Conditions Min Typ 50 60 Max Unit µs µVrms 6 0.4 V V Ω MΩ o o C C C/W Oct. 2009 Rev. 1. 3 7 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics 1.010 1.009 1.008 1.007 IOUT=10mA IOUT=150mA IOUT=300mA VIN=2.5V Output Voltage (V) 3.340 3.338 3.336 3.334 3.332 3.330 3.328 3.326 3.324 IOUT=10mA IOUT=150mA IOUT=300mA VIN=4.3V VOUT=3.3V Output Voltage (V) 1.006 1.005 1.004 1.003 1.002 1.001 1.000 -40 VOUT=1.0V -20 0 20 40 60 o 80 100 120 -40 -20 0 20 40 60 o 80 100 120 Case Temperature ( C) Case Temperature ( C) Figure 5. Output Voltage vs. Case Temperature Figure 6. Output Voltage vs. Case Temperature 5.275 5.270 5.265 5.260 IOUT=10mA IOUT=150mA IOUT=300mA Output Voltage (V) 1.0 Output Voltage (V) 5.255 5.250 5.245 5.240 5.235 5.230 5.225 -40 VIN=6V, VOUT=5.2V 0.8 0.6 0.4 0.2 IOUT=0 IOUT=300mA TC=25 C VOUT=1.0V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 o 0.0 -20 0 20 40 60 o 80 100 120 0.0 Case Temperature ( C) Input Voltage (V) Figure 7. Output Voltage vs. Case Temperature Figure 8. Output Voltage vs. Input Voltage Oct. 2009 Rev. 1.3 8 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 6.0 3.5 3.0 2.5 5.5 5.0 4.5 IOUT=0 IOUT=300mA TC=25 C, VOUT=5.2V o Output Voltage (V) Output Voltage (V) IOUT=0 IOUT=300mA TC=25 C, VOUT=3.3V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 o 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 2.0 1.5 1.0 0.5 0.0 0.0 Input Voltage (V) Input Voltage (V) Figure 9. Output Voltage vs. Input Voltage Figure 10. Output Voltage vs. Input Voltage 1.0 3.5 3.0 0.8 Output Voltage (V) 0.6 Output Voltage (V) 2.5 2.0 1.5 1.0 0.5 0.4 TC=-40 C TC=25 C o o o 0.2 TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V o o o TC=85 C VIN=2.5V VOUT=1.0V 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.00 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 Output Current (A) Output Current (A) Figure 11. Output Voltage vs. Output Current Figure 12. Output Voltage vs. Output Current Oct. 2009 Rev. 1. 3 9 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 6 3.5 5 3.0 2.5 2.0 1.5 1.0 0.5 Output Voltage (V) Output Voltage (V) 4 3 VIN=3.8V VIN=4.3V VIN=6V TC=25 C, VOUT=3.3V o 2 TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V o o o 1 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0 0.0 0.1 0.2 0.3 0.4 0.5 Output Current (A) Output Current (A) Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current 80 80 70 70 60 Quiescent Current (µA) 50 40 30 20 10 0 -10 o o Quiescent Current (µA) 60 50 40 30 20 10 0 TC=-40 C TC=25 C TC=85 C IOUT=0 VOUT=1.0V 1 2 3 4 5 6 o TC=-40 C TC=25 C TC=85 C IOUT=0, VOUT=3.3V 0 1 2 3 4 5 6 o o o Input Voltage (V) Input Voltage (V) Figure 15. Quiescent Current vs. Input Voltage Figure 16. Quiescent Current vs. Input Voltage Oct. 2009 Rev. 1.3 10 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 120 80 70 110 TC=-40 C TC=25 C TC=85 C VIN=2.5V VOUT=1.0V 90 o o o Quiescent Current (µA) 50 40 30 20 10 0 Quiescent Current (µA) 6 60 100 TC=-40 C TC=25 C TC=85 C IOUT=0, VOUT=5.2V 0 1 2 3 4 5 o o o 80 70 60 0.00 0.05 0.10 0.15 0.20 0.25 0.30 Input Voltage (V) Output Current (A) Figure 17. Quiescent Current vs. Input Voltage Figure 18. Quiescent Current vs. Output Current 115 110 105 TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V Quiescent Current (µA) o o o 110 105 100 95 90 85 80 75 70 0.00 TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V o o o Quiescent Current (µA) 100 95 90 85 80 75 70 65 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.05 0.10 0.15 0.20 0.25 0.30 Output Current (A) Output Current (A) Figure 19. Quiescent Current vs. Output Current Figure 20. Quiescent Current vs. Output Current Oct. 2009 Rev. 1. 3 11 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 64 VIN=2.5V 62 73 IOUT=0 VOUT=1.0V 72 Quiescent Current (µA) Quiescent Current (µA) 60 71 58 70 56 69 54 68 IOUT=0 52 -40 -20 0 20 40 60 o 67 80 100 120 -40 VIN=4.3V, VOUT=3.3V -20 0 20 40 60 o 80 100 120 Case Temperature ( C) Case Temperature ( C) Figure 21. Quiescent Current vs. Case Temperature Figure 22. Quiescent Current vs. Case Temperature 80 79 78 77 0.26 IOUT=0 VIN=6V,VOUT=5.2V 0.24 0.22 0.20 TC=-40 C TC=25 C TC=85 C VOUT=3.3V o o o Quiescent Current (µA) Dropout Voltage (V) -20 0 20 40 60 o 76 75 74 73 72 71 70 69 68 -40 80 100 120 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00 0.05 0.10 0.15 0.20 0.25 0.30 Case Temperature ( C) Output Current (A) Figure 23. Quiescent Current vs. Case Temperature Figure 24. Dropout Voltage vs. Output Current Oct. 2009 Rev. 1.3 12 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 0.18 0.16 0.14 0.24 TC=-40 C TC=25 C TC=85 C Dropout Voltage (V) VOUT=5.2V o o o 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 Dropout Voltage (V) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00 IOUT=10mA IOUT=150mA IOUT=300mA VOUT=3.3V -40 -20 0 20 40 o 0.02 0.05 0.10 0.15 0.20 0.25 0.30 0.00 60 80 100 Output Current (A) Case Temperature ( C) Figure 25. Dropout Voltage vs. Output Current Figure 26. Dropout Voltage vs. Case Temperature 0.18 0.16 0.14 2.0 1.8 1.6 VOUT=1.0V No heatsink IOUT=150mA IOUT=300mA VOUT=5.2V Power Dissipation (W) Dropout Voltage (V) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -40 IOUT=10mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 40 60 o -20 0 20 40 o 60 80 80 100 120 Case Temperature ( C) Case Temperature( C) Figure 27. Dropout Voltage vs. Case Temperature Figure 28. Power Dissipation vs. Case Temperature Oct. 2009 Rev. 1. 3 13 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) VIN 500mV/div IOUT 200mA/div VOUT 50mV/div VOUT 50mV/div Figure 29. Line Transient (Condition: CIN=COUT=1µF, IOUT=10mA, VIN=2.5V to 3.3V, VOUT=1V) Figure 30. Load Transient (Condition: CIN=COUT=1µF,Sew Rate=20mA/µs, VIN=2.5V, VOUT=1V, IOUT=10mA to 300mA) IOUT 200mA/div IOUT 200mA/div VOUT 50mV/div VOUT 50mV/div Figure 31. Load Transient (Condition: CIN=COUT=1µF, IOUT=10mA to 300mA, VIN=4.3V, VOUT=3.3V) Figure 32. Load Transient (Condition: CIN=COUT=1µF,Sew Rate=20mA/µs, VIN=6V, VOUT=5.2V, IOUT=10mA to 300mA) Oct. 2009 Rev. 1.3 14 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 90 80 70 60 IOUT=10mA IOUT=300mA VOUT=1V,Ripple=1VPP 70 60 50 PSRR (dB) PSRR (dB) 50 40 30 20 10 40 30 20 IOUT=10mA IOUT=300mA VOUT=3.3V, Ripple=1VPP 100 1k 10k 100k 10 0 100 1000 10000 100000 Frequency (Hz) Frequency (Hz) Figure 33. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=1V Ripple=1VPP) Figure 34. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=4.3V, VOUT=3.3V Ripple=1VPP) 70 60 50 PSRR (dB) 40 30 IOUT=10mA 20 IOUT=300mA VOUT=5.2V, Ripple=0.5VPP 10 100 1k 10k 100k Frequency (Hz) Figure 35. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=6V, VOUT=5.2V Ripple=0.5VPP) Oct. 2009 Rev. 1. 3 15 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Application VIN VIN VOUT VOUT AP2127 Shutdown GND ADJ R1 COUT 1µ F R2 CIN 1µF VOUT=0.8*(1+R1/R2) V VIN VOUT VIN VOUT AP2127 Shutdown CIN 1µF COUT 1µF GND For 1.0V to5.2V fixed voltage versions Figure 36. Typical Application of AP2127 Oct. 2009 Rev. 1.3 16 BCD Semiconductor Manufacturing Limited Data Sheet P SPEED, EXTREMELY 300mA HIGHreliminary Datasheet LOW NOISE CMOS LDO REGULATOR Mechanical Dimensions SOT-23-5 2.820(0.111) 3.020(0.119) AP2127 Unit: mm(inch) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0° 8° 1.450(0.057) MAX 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.300(0.051) Oct. 2009 Rev. 1. 3 17 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806