AP2202R-3.3TRE1

Data Sheet 150mA RF ULDO REGULATOR General Description The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage (typically 165mV at 150mA), very low standby current (1µA maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. The AP2202 also features logic compatible enable/ shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The AP2202 has adjustable, 2.5V, 2.6V, 2.7V, 2.8V, 2.9V, 3.0V, 3.3V and 4.0V versions. The AP2202 is available in space saving SOT-23-5 and SOT-89-3 packages. AP2202 Features · · · · · · · · · · · Up to 150mA Output Current Low Standby Current Low Dropout Voltage: VDROP=165mV at 150mA High Output Accuracy: ±1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reverse-battery Protection Logic-controlled Enable Applications · · · · · · · Cellular Phones Cordless Phones Digital Still Cameras Wireless Communicators PDAs / Palmtops PC Mother Board Consumer Electronics SOT-23-5 SOT-89-3 Figure 1. Package Types of AP2202 Mar. 2007 Rev. 1. 7 1 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Pin Configuration K Package (SOT-23-5) AP2202 VIN GND EN 1 2 3 5 VOUT VIN GND 1 2 3 5 VOUT 4 BYP EN 4 ADJ R Package (SOT-89-3) 3 2 1 VIN GND (TAB) VOUT Figure 2. Pin Configuration of AP2202 (Top View) Pin Description Pin Number SOT-23-5 1 2 3 4 5 1 SOT-89-3 3 2 Pin Name VIN GND EN BYP/ADJ VOUT Input voltage Ground (TAB for SOT-89-3) Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown Bypass capacitor for low noise operation/Adjust output Regulated output voltage Function Mar. 2007 Rev. 1. 7 2 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Functional Block Diagram AP2202 VIN 1 (3) 5 (1) VOUT BYP 4 + EN 3 Current Limit Thermal Shutdown Bandgap Ref. 2 (2) A (B) A for SOT-23-5 B for SOT-89-3 GND Fixed Regulator VIN 1 5 VOUT + EN 3 Current Limit Thermal Shutdown Bandgap Ref. 4 ADJ 2 GND Adjustable Regulator Figure 3. Functional Block Diagram of AP2202 Mar. 2007 Rev. 1. 7 3 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Ordering Information AP2202 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Package K: SOT-23-5 R: SOT-89-3 ADJ: Adjustable Output 2.5: Fixed Output 2.5V 2.6: Fixed Output 2.6V 2.7: Fixed Output 2.7V 2.8: Fixed Output 2.8V 2.9: Fixed Output 2.9V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 4.0: Fixed Output 4.0V AP2202 Circuit Type Package Temperature Range Part Number Tin Lead AP2202K-ADJTR AP2202K-2.5TR AP2202K-2.6TR AP2202K-2.7TR Lead Free AP2202K-ADJTRE1 AP2202K-2.5TRE1 AP2202K-2.6TRE1 AP2202K-2.7TRE1 AP2202K-2.8TRE1 AP2202K-2.9TRE1 AP2202K-3.0TRE1 AP2202K-3.3TRE1 AP2202K-4.0TRE1 AP2202R-3.3TRE1 Marking ID Packing Type Tin Lead K2C K2D K2E K2F K2G K2H K2I K2L K2S R22B Lead Free E2C E2D E2E E2F E2G E2H E2I E2L E2S E22B Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel SOT-23-5 -40 to 125oC AP2202K-2.8TR AP2202K-2.9TR AP2202K-3.0TR AP2202K-3.3TR AP2202K-4.0TR SOT-89-3 -40 to 125oC AP2202R-3.3TR BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1. 7 4 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Absolute Maximum Ratings (Note 1) Parameter Supply Input Voltage Enable Input Voltage Power Dissipation Lead Temperature (Soldering, 10sec) Junction Temperature Storage Temperature ESD (Machine Model) Thermal Resistance (No Heatsink) θJA SOT-23-5 SOT-89-3 Symbol VIN VEN PD TLEAD TJ TSTG Value 15 15 Internally Limited (Thermal Protection) 260 150 -65 to 150 200 200 o AP2202 Unit V V W o o C C oC V C/W 165 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Input Voltage Enable Input Voltage Operating Junction Temperature Symbol VIN VEN TJ Min 2.5 0 -40 Max 13.2 13.2 125 Unit V V oC Mar. 2007 Rev. 1. 7 5 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics AP2202-ADJ Electrical Characteristics VIN=VOUT+1V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min -1 -2 120 VIN=VOUT+1V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 0.004 0.02 15 110 0.012 0.05 VRLOAD 0.2 0.5 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % ∆VOUT/∆T VRLINE µV/oC %/V % mV µA µA V Mar. 2007 Rev. 1. 7 6 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-ADJ Electrical Characteristics VIN=VOUT+1V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 7 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=3.5V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 48 1 1 15 110 3 13 5 13 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 8 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 9 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.6 Electrical Characteristics VIN=3.6V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=3.6V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 46 1 1 15 110 3 13 6 14 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 10 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.6 Electrical Characteristics VIN=3.6V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 11 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.7 Electrical Characteristics VIN=3.7V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=3.7V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 44.4 1 1 15 110 4 14 6 14 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 12 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.7 Electrical Characteristics VIN=3.7V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 13 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.8 Electrical Characteristics VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=3.8V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 42.8 1 1 15 110 4 14 6 14 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 14 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.8 Electrical Characteristics VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 15 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.9 Electrical Characteristics VIN=3.9V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=3.9V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 41.3 1 1 15 110 4 14 7 15 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 16 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-2.9 Electrical Characteristics VIN=3.9V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 17 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=4V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 40 1 1 15 110 4 14 7 15 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 18 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 19 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=4.3V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 36.3 1 1 15 110 5 15 8 17 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 20 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 21 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-4.0 Electrical Characteristics VIN=5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol ∆VOUT/VOUT ∆VOUT/∆T (∆VOUT/VOUT)/∆T VRLINE VRLOAD VIN=5V to 13.2V IOUT=0.1mA to 150mA IOUT=100µA IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA Standby Current ISTD VEN≤0.4V (shutdown) VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=0µA VEN≥2.0V, IOUT=100µA Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=50mA VEN≥2.0V, IOUT=100mA VEN≥2.0V, IOUT=150mA Ripple Rejection Current Limit Output Noise Enable Input Logic-Low Voltage PSRR ILIMIT eno VIL frequency=100Hz, IOUT=100µA VOUT=0V IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND Regulator shutdown 95 98 350 600 1300 75 320 260 0.4 0.18 550 140 165 0.01 Conditions Variation from specified VOUT Min -1 -2 120 30 1 1 15 110 6 17 9 20 50 70 150 230 250 300 275 350 1 5 130 150 140 160 600 800 1000 1500 1900 2500 dB mA nV / Hz AP2202 Typ Max 1 2 Unit % µV/oC ppm/oC mV mV mV µA µA V Mar. 2007 Rev. 1. 7 22 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2202-4.0 Electrical Characteristics VIN=5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (note 2), unless otherwise specified. Parameter Enable Input Voltage Enable Input Current Enable Input Current Logic-High Logic-Low Logic-High Symbol VIH IIL IIH Conditions Regulator enabled VIL≤0.4V VIL≤0.18V VIH≥2.0V VIH≥2.0V 5 Min 2.0 0.01 1 2 20 25 µA Typ Max Unit V µA AP2202 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 7 23 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Performance Characteristics AP2202 2.900 2.875 2.850 350 AP2202-2.8 VIN=3.8V, IOUT=10mA Dropout Voltage (mV) IOUT=50mA 300 IOUT=100mA IOUT=150mA CIN=1.0µF, COUT=2.2µF CIN=1.0µF, COUT=2.2µF Output Voltage (V) 250 2.825 2.800 2.775 2.750 2.725 2.700 -60 200 150 100 50 -40 -20 0 20 40 60 o 80 100 120 140 0 -60 -40 -20 0 20 40 60 o 80 100 120 140 Junction Temperature ( C) Junction Temperature ( C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 6 5 4 5000 TA=25 C CIN=1.0µF, COUT=2.2µF Ground Pin Current (µA) o 4000 AP2202-2.8 IOUT=50mA IOUT=100mA IOUT=150mA VIN=3.8V,VEN=2.0V CIN=1.0µF, COUT=2.2µF Ground Pin Current (mA) 3 2 1 0 -1 -2 3000 2000 1000 0 -1000 -3 -4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 -2000 -60 -40 -20 0 20 40 60 o 80 100 120 140 Output Current (mA) Junction Temperature ( C) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature Mar. 2007 Rev. 1. 7 24 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2202 20 18 16 2.0 AP2202-2.8 VEN=1.8V VEN=2.0V VEN=3.0V VEN=4.0V VIN=3.8V, CIN=1.0µF COUT=2.2µF, IOUT=100µA Enable Voltage (V) 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 AP2202-2.8 VEN=on VEN=off CIN=1.0µF,COUT=2.2µF VIN=3.8V,IOUT=5mA Enable Current (µA) 14 12 10 8 6 4 2 0 -60 0.7 -40 -20 0 20 40 60 o 80 100 120 140 0.6 -60 -40 -20 0 20 40 60 o 80 100 120 140 Junction Temperature ( C) Junction Temperature ( C) Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature 200 10 IOUT=10mA CIN=1.0µF, COUT=2.2µF Output Noise ( µV/ Hz ) 150 AP2202-2.8 CIN=1.0µF, COUT=2.2µF, CBYP=100pF 1 Noise Measurement Filter: DIN Noise VIN=4.5V, IOUT=10mA Noise (µVrms) 100 0.1 50 0.01 0 10 100 1000 10000 0.001 10 100 1k 10k 100k 1M 10M Bypass Capacitor (pF) Frequency (Hz) Figure 10. Noise vs. Bypass Capacitor Figure 11. Output Noise vs. Frequency Mar. 2007 Rev. 1. 7 25 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2202 150 IOUT (mA) 100 50 0 AP2202-2.8 VIN (v) 5.8 AP2202-2.8 4.8 3.8 2.8 20 ∆VOUT (mV) 0 -50 -100 0 10 20 30 40 50 Time (µs) ∆VOUT (mV) 50 0 -20 -40 -60 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 Time (µs) Figure 12. Load Transient (Conditions: VIN=3.8V, CBYP=100pF, VEN=2V, IOUT=5mA to 50mA, CIN=1.0µF, COUT=2.2µF) Figure 13. Line Transient (Conditions: VIN=3.8V to 4.8V, VEN=2V, IOUT=100µA CBYP=100pF, COUT=10µF) 4 AP2202-2.8 2 VEN (V) 0 PSRR (dB) 100 90 80 70 AP2202-2.8 VIN=3.8V, VRIPPLE=1VPP IOUT=10mA, COUT=2.2µF 3 2 1 60 50 40 30 VOUT (V) 0 -1 -2 0 100 200 300 400 500 Time (µs) 20 10 0 10 100 1k 10k 100k 1M 600 700 800 900 1000 Frequency (Hz) Figure 14. VEN(on) vs. VOUT (Conditions: VEN=0V to 2V, VIN=3.8V, IOUT=30mA, CBYP=open, CIN=1.0µF, COUT=2.2µF) Figure 15. PSRR vs. Frequency Mar. 2007 Rev. 1. 7 26 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2202 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 0.8 SOT-23-5 Package No Heatsink Power Dissipation (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 SOT-89-3 Package No Heatsink Power Dissipation (W) 50 75 100 o 125 150 50 75 100 o 125 150 Ambient Temperature ( C) Ambient Temperature ( C) Figure 16. Power Dissipation vs. Ambient Temperature Figure 17. Power Dissipation vs. Ambient Temperature 100 100 10 COUT=1.0µF No Bypass Capacitor 10 COUT=2.2µF No Bypass Capacitor ESR (Ω) ESR (Ω) 1 Stable Area 1 Stable Area 0.1 0.1 0.01 0 25 50 75 100 125 150 0.01 0 25 50 75 100 125 150 Output Current (mA) Output Current (mA) Figure 18. ESR vs. Output Current Figure 19. ESR vs. Output Current Mar. 2007 Rev. 1. 7 27 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2202 100 10 COUT=4.7µF No Bypass Capacitor ESR (Ω) 1 Stable Area 0.1 0.01 0 25 50 75 100 125 150 Output Current (mA) Figure 20. ESR vs. Output Current Mar. 2007 Rev. 1. 7 28 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Typical Application AP2202 VIN=3.8V VIN VIN EN CIN 1.0µF GND AP2202-2.8 VOUT VOUT=2.8V VOUT BYP CBYP 100pF COUT 2.2µF VIN VIN AP2202-ADJ VOUT R1 VOUT CIN 1.0 µ F EN GND ADJ CBYP optional R2 COUT 2.2 µ F VOUT=1.25* (1+R2/R1) Figure 21. Typical Application of AP2202 (Note 7) Note 7: Dropout voltage is 165mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.165V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+0.5V to 13.2V. For AP2202-2.8 version, its input voltage can be set from 3.3V(VOUT+0.5V) to 13.2V. For that of Adj version, any value from VOUT+0.5V to 13.2V is available. R1 and R2 must be correctly selected when setting the output voltage. For example, if 3.0V output voltage is required, R1 and R2 can be set to 10kΩ and 14kΩ respectively. For Adj version, we recommend 2.3V as minimum output voltage. Mar. 2007 Rev. 1. 7 29 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Application Information Input Capacitor A 1µF minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1.0µF minimum is recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. The start-up speed of the AP2202 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16,17), using: TJ = PD*θJA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, θJA is 200oC/W for SOT-23-5 package and 165oC/W for SOT-89-3 package, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. Example: For 2.8V version packaged in SOT-23-5, IOUT=150mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.15A*200oC/W)+2.8V=6.133V Therefore, for good performance, please make sure that input voltage is less than 6.133V without heatsink when TA=50oC. AP2202 Mar. 2007 Rev. 1. 7 30 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Mechanical Dimensions SOT-23-5 Unit: mm(inch) AP2202 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.600(0.024) 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0° 8° 1.050(0.041) 1.250(0.049) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Mar. 2007 Rev. 1. 7 31 BCD Semiconductor Manufacturing Limited Data Sheet 150mA RF ULDO REGULATOR Mechanical Dimensions (Continued) SOT-89-3 Unit: mm(inch) AP2202 1.630(0.064) 1.830(0.072) 1.400(0.055)* 4.400(0.173) 4.600(0.181) 0.000(0.000) 0.076(0.003) 1.400(0.055) 1.600(0.063) R0.200(0.008) 3.950(0.156) 4.250(0.167) 1.200(0.047) 0.900(0.035) 2.300(0.091) 2.600(0.102) 3° 10° 0.360(0.014) 0.520(0.020) 3.000(0.118) 0.360(0.014) 0.480(0.019) 0.440(0.017) 0.560(0.022) 0.360(0.014) 0.440(0.017) 3° 10° R0.150(0.006) Mar. 2007 Rev. 1. 7 32 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788