PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
General Description
Features
The AP2401 series are dual positive voltage regulator
ICs fabricated by CMOS process. Each of these ICs
consists of a voltage reference, two error amplifiers,
two resistor networks for setting output voltages. Each
channel has a current limit circuit for current protection.
·
The AP2401 series feature high ripple rejection, low
dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them
ideal for use in various battery-powered devices. The
chip enable function allows the output of each channel
to be turned on/off independently, greatly reducing the
power consumption.
·
·
·
·
·
·
·
The AP2401 are available in standard SOT-23-6 and
DFN-1.8x2-6 packages.
Maximum Output Current/Channel: More Than
200mA (300mA Limit)
High Output Voltage Accuracy: ±2%
Low Quiescent Current/Channel: 25µA Typical
Low Standby Current: 0.1µA Typical
High PSRR: 70dB Typical (f=1kHz)
Extremely Low Noise: 30µVrms (10Hz to
100kHz)
Operating Temperature: -40 to 85oC
Compatible with Low ESR Ceramic Capacitor
Applications
·
·
·
·
·
The AP2401 series have 1.2V/1.8V, 1.8V/2.5V, 1.8V/
2.8V, 1.8V/3.3V, 2.8V/1.8V and 2.8V/3.3V versions.
AP2401
·
Mobile Phones, Cordless Phones
Wireless Communication Equipment
Portable Games
Cameras, Video Recorders
Sub-board Power Supplies for Telecom Equipment
Battery Powered Equipment
DFN-1.8x2-6
SOT-23-6
Figure 1. Package Types of AP2401
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
1
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Pin Configuration
K Package
(SOT-23-6)
DN Package (Note 1)
(DFN-1.8x2-6)
Pin 1 Mark
Pin 1 Mark
CE1
1
6
VOUT1
CE2
1
VIN
2
5
GND
VIN
2
CE2
3
4
VOUT2
CE1
3
Exposed
Pad
6
VOUT2
5
VOUT1
4
GND
Note 1: The exposed pad should be connected to GND for better dissipation or left open.
Figure 2. Pin Configuration of AP2401 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOT-23-6
DFN-1.8x2-6
1
3
CE1
On/Off Control 1, Logic High=enable; Logic Low=Shutdown
2
2
VIN
Input Voltage
3
1
CE2
On/Off Control 2, Logic High=enable; Logic Low=Shutdown
4
6
VOUT2
5
4
GND
6
5
VOUT1
Output Voltage 2
Ground
Output Voltage 1
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
2
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Functional Block Diagram
CE1
1(3)
On/Off
Control
Error
Amplifier1
VR1
Each Circuit
VIN
GND
VOUT1
2(2)
5(4)
VR2
Each Circuit
CE2
6(5)
Current
Limit
3(1)
Error
Amplifier 2
4(6)
Current
Limit
On/Off
Control
VOUT2
Voltage
Reference
A(B)
A for SOT-23-6
B for DFN-1.8x2-6
Figure 3. Functional Block Diagram of AP2401
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
3
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Ordering Information
AP2401
E1: Lead Free
G1: Green
Circuit Type
TR: Tape and Reel
B: Active High
(Without Built-in Pull-down Resistor)
Package
0: Fixed Output 1.2V (Channel 1)
1: Fixed Output 1.8V (Channel 1)
3: Fixed Output 2.8V (Channel 1)
K: SOT-23-6
DN: DFN-1.8x2-6
1: Fixed Output 1.8V (Channel 2)
2: Fixed Output 2.5V (Channel 2)
3: Fixed Output 2.8V (Channel 2)
4: Fixed Output 3.3V (Channel 2)
Package
SOT-23-6
DFN1.8x2-6
Temperature
Range
-40 to 85oC
-40 to 85oC
Condition
Output
Voltages
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
Active High Without Built-in Pulldown Resistor
1.2V/1.8V
AP2401B01KTRE1
AP2401B01KTRG1
E8P
G7Q
Tape &
Reel
Active High Without Built-in Pulldown Resistor
1.8V/2.5V
AP2401B12KTRE1
AP2401B12KTRG1
E9P
G9P
Tape &
Reel
Active High Without Built-in Pulldown Resistor
1.8V/2.8V
AP2401B13KTRE1
AP2401B13KTRG1
E9Q
G9Q
Tape &
Reel
Active High Without Built-in Pulldown Resistor
1.8V/3.3V
AP2401B14KTRE1
AP2401B14KTRG1
E9R
G9R
Tape &
Reel
Active High Without Built-in Pulldown Resistor
2.8V/1.8V
AP2401B31KTRE1
AP2401B31KTRG1
E8R
G8R
Tape &
Reel
Active High Without Built-in Pulldown Resistor
2.8V/3.3V
AP2401B34KTRE1
AP2401B34KTRG1
E8Q
G8Q
Tape &
Reel
Active High Without Built-in Pulldown Resistor
1.2V/1.8V
AP2401B01DNTR- AP2401B01DNTR
3A
E1
-G1
VA
Tape &
Reel
Active High Without Built-in Pulldown Resistor
1.8V/2.8V
AP2401B13DNTR- AP2401B13DNTR
3B
E1
-G1
VB
Tape &
Reel
Active High Without Built-in Pulldown Resistor
2.8V/3.3V
AP2401B34DNTR- AP2401B34DNTR
3C
E1
-G1
VC
Tape &
Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
4
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Absolute Maximum Ratings (Note 2)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
6.5
V
IOUT1+IOUT2
700
mA
Power Dissipation (TA=25oC)
PD
250
mW
Junction Temperature
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
ESD
3000
V
Output Current (TA=25oC)
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
ESD (Human Body Model)
Note 2: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Input Voltage
VIN
Operating Ambient Temperature Range
TA
Feb. 2012 Rev. 1. 8
Min
-40
Max
Unit
6
V
85
oC
BCD Semiconductor Manufacturing Limited
5
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Electrical Characteristics
(Channel 1/Channel 2: VIN=VOUT+1V, TJ=25oC, CIN=1µF, COUT=1µF, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Output Voltage Accuracy
Input Voltage
Maximum Output Current
∆VOUT/VOUT
Variation from specified
VOUT, IOUT=30mA
2
%
6
V
40
60
mV
0.01
0.2
%/V
-2
IOUT
VRLOAD
Line Regulation
VRLINE
200
1mA≤IOUT≤200mA
VOUT+1V≤VIN≤6V
IOUT=30mA, VCE=VIN
VOUT=1.2V
IOUT=30mA
VDROP
IOUT=100mA
IQ
mA
700
750
VOUT=1.8V
60
70
VOUT=2.5V
45
55
VOUT=2.8V
45
55
VOUT=3.3V
35
45
VOUT=1.2V
800
900
VOUT=1.8V
175
195
VOUT=2.5V
135
160
VOUT=2.8V
135
160
mV
VOUT=3.3V
125
150
VOUT=1.2V
1000
1200
VOUT=1.8V
365
550
VOUT=2.5V
275
500
VOUT=2.8V
270
500
VOUT=3.3V
230
500
VCE=VIN=VOUT+1V,
IOUT=0mA
25
45
µA
1
µA
IOUT=200mA
Quiescent Current
Unit
VIN
Load Regulation
Dropout Voltage
Max
Standby Current
ISTD
VCE in OFF mode
0.1
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p, f=1kHz
VIN=VOUT+1V, IOUT=30mA
70
dB
±100
ppm/oC
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T IOUT=30mA, -40oC≤TJ≤85oC
Current Limit
ILIMIT
VCE=VIN
300
mA
Short Circuit Current
ISHORT
VCE=VIN, VOUT=0
30
mA
VNOISE
TA=25oC
30
µVrms
RMS Output Noise
CE "High" Voltage
10Hz ≤f≤100kHz
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
Thermal Resistance
(Junction to Case)
θJC
SOT-23-6
DFN-1.8x2-6
Feb. 2012 Rev. 1. 8
1.3
61.3
20
6
V
0.25
V
o
C/W
BCD Semiconductor Manufacturing Limited
6
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics
3.0
2.0
1.8
2.5
1.4
Output Voltage (V)
Output Voltage (V)
1.6
1.2
1.0
0.8
1.8V (Channel 1)
o
TJ=-40 C
0.6
2.5V (Channel 2)
o
TJ=-40 C
2.0
o
TJ=25 C
1.5
o
TJ=85 C
1.0
o
0.4
TJ=25 C
0.2
TJ=85 C
0.5
o
0.0
0
50
100
150
200
250
300
350
0.0
400
0
50
100
200
250
300
350
400
Figure 5. Output Voltage vs. Output Current
Figure 4. Output Voltage vs. Output Current
3.5
3.0
3.0
Output Voltage (V)
2.5
Output Voltage (V)
150
Output Current (mA)
Output Current (mA)
2.0
1.5
2.8V (Channel 2)
o
TJ=-40 C
1.0
2.5
2.0
1.5
3.3V (Channel 2)
o
TJ=-40 C
1.0
o
o
TJ=25 C
0.5
0.0
0
50
100
150
200
250
300
350
TJ=25 C
0.5
o
TJ=85 C
0.0
400
Output Current (mA)
o
TJ=85 C
0
50
100
150
200
250
300
350
400
Output Current (mA)
Figure 7. Output Voltage vs. Output Current
Figure 6. Output Voltage vs. Output Current
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
7
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
3.0
2.0
1.8
2.5
1.8V (Channel 1)
o
TJ=25 C
1.4
Output Voltage (V)
Output Voltage (V)
1.6
VIN=2.1V
1.2
VIN=4V
1.0
VIN=6V
0.8
0.6
0.4
2.5V (Channel 2)
o
TJ=25 C
2.0
VIN=2.8V
1.5
VIN=4V
VIN=6V
1.0
0.5
0.2
0.0
0.0
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 9. Output Voltage vs. Output Current
Figure 8. Output Voltage vs. Output Current
3.0
3.2
2.8
Output Voltage (V)
Output Voltage (V)
2.5
2.0
1.5
2.8V (Channel 2)
o
TJ=25 C
1.0
VIN=3.1V
50
100
150
200
250
300
350
VIN=6V
1.2
0.0
0
VIN=4V
1.6
0.4
VIN=6V
0.0
VIN=3.6V
2.0
0.8
VIN=4V
0.5
3.3V (Channel 2)
o
TJ=25 C
2.4
400
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 11. Output Voltage vs. Output Current
Figure 10. Output Voltage vs. Output Current
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
8
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
3.0
2.0
1.8
2.5
1.4
Output Voltage (V)
Output Voltage (V)
1.6
1.2
1.0
1.8V (Channel 1)
o
TJ=25 C
0.8
0.6
1.5
2.5V (Channel 2)
o
TJ=25 C
1.0
IOUT=0mA
IOUT=0mA
0.4
IOUT=30mA
0.2
IOUT=100mA
0.0
2.0
0.0
0
1
2
3
4
5
IOUT=30mA
0.5
6
IOUT=100mA
0
1
2
Input Voltage (V)
3.0
5
6
3.5
3.0
Output Voltage (V)
2.5
Output Voltage (V)
4
Figure 13. Output Voltage vs. Input Voltage
Figure 12. Output Voltage vs. Input Voltage
2.0
1.5
2.8V (Channel 2)
o
TJ=25 C
1.0
IOUT=0mA
2.5
2.0
3.3V (Channel 2)
o
TJ=25 C
1.5
1.0
IOUT=0mA
IOUT=30mA
0.5
0.0
3
Input Voltage (V)
0
1
2
3
4
5
IOUT=30mA
0.5
IOUT=100mA
0.0
6
Input Voltage (V)
IOUT=100mA
0
1
2
3
4
5
6
Input Voltage (V)
Figure 15. Output Voltage vs. Input Voltage
Figure 14. Output Voltage vs. Input Voltage
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
9
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
500
600
550
1.8V (Channel 1)
o
TJ=-40 C
400
o
450
TJ=25 C
400
TJ=85 C
2.5V (Channel 2)
o
TJ=-40 C
450
o
Dropout Voltage (mV)
Dropout Voltage (mV)
500
o
350
300
250
200
150
TJ=25 C
350
o
TJ=85 C
300
250
200
150
100
100
50
50
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
175
200
Figure 17. Dropout Voltage vs. Output Current
Figure 16. Dropout Voltage vs. Output Current
500
500
450
2.8V (Channel 2)
o
TJ=-40 C
450
400
3.3V (Channel 2)
o
TJ=-40 C
400
o
o
TJ=25 C
350
Dropout Voltage (mV)
Dropout Voltage (mV)
150
Output Current (mA)
Output Current (mA)
o
TJ=85 C
300
250
200
150
350
TJ=25 C
300
TJ=85 C
o
250
200
150
100
100
50
50
0
0
0
25
50
75
100
125
150
175
0
200
25
50
75
100
125
150
175
200
Output Current (mA)
Output Current (mA)
Figure 19. Dropout Voltage vs. Output Current
Figure 18. Dropout Voltage vs. Output Current
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
10
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
2.56
1.84
1.83
2.54
Output Voltage (V)
Output Voltage (V)
1.82
1.81
1.80
1.79
1.78
1.8V (Channel 1)
VIN=2.8V
1.77
IOUT=30mA
0
25
50
2.50
2.48
2.5V (Channel 2)
VIN=3.5V
2.46
1.76
-25
2.52
IOUT=30mA
2.44
75
-25
0
o
2.84
3.32
Output Voltage (V)
Output Voltage (V)
3.34
2.82
2.80
2.74
2.8V (Channel 2)
VIN=3.8V
0
25
50
3.30
3.28
3.26
3.3V (Channel 2)
VIN=4.3V
3.24
IOUT=30mA
-25
75
Figure 21. Output Voltage vs. Junction Temperature
2.86
2.76
50
Junction Temperature ( C)
Figure 20. Output Voltage vs. Junction Temperature
2.78
25
o
Junction Temperature ( C)
IOUT=30mA
3.22
-40
75
o
Junction Temperature ( C)
-20
0
20
40
60
80
o
Junction Temperature ( C)
Figure 22. Output Voltage vs. Junction Temperature
Figure 23. Output Voltage vs. Junction Temperature
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
11
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
90
90
1.8V (Channel 1)
o
TJ=-40 C
o
TJ=25 C
60
o
TJ=85 C
45
30
15
0
2.5V (Channel 2)
o
TJ=-40 C
75
Quiescent Current (µA)
Quiescent Current (µA)
75
o
TJ=25 C
o
TJ=85 C
60
45
30
15
0
1
2
3
4
5
0
6
0
1
2
Input Voltage (V)
Figure 24. Quiescent Current vs. Input Voltage
4
6
90
2.8V (Channel 2)
o
TJ=-40 C
75
3.3V (Channel 2)
o
TJ=-40 C
75
o
o
Quiescent Current (µA)
TJ=25 C
o
TJ=85 C
60
45
30
TJ=25 C
o
TJ=85 C
60
45
30
15
15
0
5
Figure 25. Quiescent Current vs. Input Voltage
90
Quiescent Current (µA)
3
Input Voltage (V)
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 27. Quiescent Current vs. Input Voltage
Figure 26. Quiescent Current vs. Input Voltage
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
12
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
31.0
30.0
29.5
28.5
IOUT=0
28.0
27.5
27.0
26.5
26.0
25.5
IOUT=0
29.5
29.0
28.5
28.0
27.5
27.0
25.0
26.5
24.5
24.0
2.5V (Channel 2)
VIN=3.5V
30.0
Quiescent Current (µA)
Quiescent Current (µA)
30.5
1.8V (Channel 1)
VIN=2.8V
29.0
-25
0
25
50
26.0
75
-25
o
50
75
Figure 29. Quiescent Current vs. Junction Temperature
32.0
31.0
30.5
31.5
2.8V (Channel 2)
VIN=3.8V
30.0
IOUT=0
29.5
29.0
28.5
28.0
27.5
30.0
29.5
29.0
28.5
28.0
26.5
27.5
27.0
0
25
50
75
IOUT=0
30.5
27.0
-25
3.3V (Channel 2)
VIN=4.3V
31.0
Quiescent Current (µA)
Quiescent Current (µA)
25
Junction Temperature ( C)
Figure 28. Quiescent Current vs. Junction Temperature
26.0
0
o
Junction Temperature ( C)
-25
0
25
50
75
o
Junction Temperature ( C)
o
Junction Temperature ( C)
Figure 31. Quiescent Current vs. Junction Temperature
Figure 30. Quiescent Current vs. Junction Temperature
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
13
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
7
VIN (1V/Div)
1.8V (Channel 1)
5
4
3
∆VOUT (50mV/Div)
50
0
-50
5
4
50
0
-50
-100
-100
Time (40µs/Div)
Time (40µs/Div)
Figure 33. Line Transient
Figure 32. Line Transient
(Conditions: IOUT=30mA, CIN=100nF, COUT=1µF)
(Conditions: IOUT=30mA, CIN=100nF, COUT=1µF)
7
6
VIN (1V/Div)
2.8V (Channel 2)
5
4
∆VOUT1 (100mV/Div)
VIN (1V/Div)
7
∆VOUT (50mV/Div)
2.5V (Channel 2)
6
50
0
-50
-100
Time (40µs/Div)
1.8V/2.5V
(Channel 1/Channel 2)
6
5
4
100
∆VOUT2
∆VOUT1
0
0
-50
-100
-100
-200
-150
Time (40µs/Div)
Figure 34. Line Transient
Figure 35. Line Transient
(Conditions: IOUT=30mA, CIN=100nF, COUT=1µF)
(Conditions: channel 1 and 2 on, IOUT=30mA,
CIN=100nF, COUT=1µF)
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
14
∆VOUT2 (50mV/Div)
∆VOUT (50mV/Div)
VIN (1V/Div)
6
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
∆VOUT (100mV/Div)
6
5
4
∆VOUT2
100
0
∆VOUT1
-50
0
-100
-100
-200
-150
IOUT (100mA/Div)
1.8V/2.5V
(Channel 1/Channel 2)
∆VOUT2 (50mV/Div)
∆VOUT1 (100mV/Div)
VIN (1V/Div)
7
300
1.8V (Channel 1)
200
100
0
-100
100
0
-100
-200
-300
Time (40µs/Div)
Time (100µs/Div)
Figure 36. Line Transient
Figure 37. Load Transient
(Conditions: channel 1 and 2 on, IOUT=30mA, CIN=COUT=1µF)
(Conditions: IOUT=10 to 200mA, CIN=COUT=1µF)
300
∆VOUT (100mV/Div)
100
0
2.5V (Channel 2)
-100
-200
IOUT (100mA/Div)
IOUT (100mA/Div)
∆VOUT (100mV/Div)
200
100
0
-100
-200
200
2.8V (Channel 2)
100
0
-100
100
0
-100
-200
-300
-300
Time (100µs/Div)
Time (100µs/Div)
Figure 38. Load Transient
Figure 39. Load Transient
(Conditions: IOUT=10 to 200mA, CIN=COUT=1µF)
(Conditions: IOUT=10 to 200mA, CIN=COUT=1µF)
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
15
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
3.3V (Channel 2)
0
-100
-200
100
0
-100
-200
-300
0
-20
300
1.8V/2.5V
(Channel 1/Channel 2)
200
∆VOUT1
100
-40
0
∆VOUT2
∆VOUT2 (100mV/Div)
∆VOUT1 (20mV/Div)
20
100
IOUT2 (50mA/Div)
IOUT (100mA/Div)
∆VOUT (100mV/Div)
200
100
50
0
-50
Time (100µs/Div)
Time (100µs/Div)
Figure 40. Load Transient
Figure 41. Cross Talk 1
(Conditions: channel 1 and 2 on, IOUT1=30mA,
IOUT2=10 to 100mA, CIN=COUT=1µF)
-200
40
20
0
∆VOUT2
100
50
0
20
0
-20
1.8V/2.8V
(Channel 1/Channel 2)
∆VOUT1
300
200
100
0
-40
∆VOUT2
100
50
0
-50
-50
Time (100µs/Div)
Time (100µs/Div)
Figure 43. Cross Talk 3
(Conditions: channel 1 and 2 on, IOUT1=30mA,
IOUT2=10 to 100mA, CIN=COUT=1µF)
Figure 42. Cross Talk 2
(Conditions: channel 1 and 2 on, IOUT1=10 to 100mA,
IOUT2=30mA, CIN=COUT=1µF)
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
16
∆VOUT2 (100mV/Div)
-100
∆VOUT1
60
∆VOUT1 (20mV/Div)
0
1.8V/2.5V
(Channel 1/Channel 2)
∆VOUT2 (20mV/Div)
100
IOUT2 (50mA/Div)
IOUT2 (50mA/Div)
∆VOUT1 (100mV/Div)
(Conditions: IOUT=10 to 200mA, CIN=COUT=1µF)
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
0
∆VOUT2
100
50
0
0
-20
∆VOUT2
100
50
0
Time (100µs/Div)
∆VOUT2
40
20
0
∆VOUT1 (50mV/Div)
∆VOUT1
60
∆VOUT2 (20mV/Div)
-200
1.8V/3.3V
(Channel 1/Channel 2)
Figure 45. Cross Talk 5
(Conditions: channel 1 and 2 on, IOUT1=30mA,
IOUT2=10 to 100mA, CIN=COUT=1µF)
IOUT1 (100mA/Div)
IOUT1 (50mA/Div)
∆VOUT1 (100mV/Div)
Figure 44. Cross Talk 4
(Conditions: channel 1 and 2 on, IOUT1=10 to 100mA,
IOUT2=30mA, CIN=COUT=1µF)
-100
100
0
-40
Time (100µs/Div)
0
200
-50
-50
100
∆VOUT1
300
∆VOUT2 (100mV/Div)
20
1.8V/3.3V
(Channel 1/Channel 2)
100
50
0
-50
50
0
-50
-100
100
1.8V/2.5V
(Channel 1/Channel 2)
∆VOUT1
100
50
0
∆VOUT2
IOUT1
300
200
0
-100
150
∆VOUT2 (50mV/Div)
-200
40
20
IOUT2 (100mA/Div)
-100
∆VOUT1
60
∆VOUT1 (20mV/Div)
0
1.8V/2.8V
(Channel 1/Channel 2)
IOUT2 (50mA/Div)
100
∆VOUT2 (20mV/Div)
IOUT1 (50mA/Div) ∆VOUT1 (100mV/Div)
Typical Performance Characteristics (Continued)
IOUT2
-200
100
0
Time (100µs/Div)
Time (100µs/Div)
Figure 46. Cross Talk 6
(Conditions: channel 1 and 2 on, IOUT1=10 to 100mA,
IOUT2=30mA, CIN=COUT=1µF)
Figure 47. Cross Talk 7
(Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA,
CIN=COUT=1µF)
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
17
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
50
0
-100
∆VOUT2
100
IOUT1
300
200
0
-100
IOUT2
-200
100
0
0
0
∆VOUT2
100
300
IOUT1
0
Figure 48. Cross Talk 8
100
-100
IOUT2
-200
3
2
-2
1
-3
0
ESR of Output Capacitor (Ω)
VOUT1
VOUT2 (1V/Div)
VCE1/VCE2 (1V/Div)
VOUT1 (1V/Div)
0
-1
CIN=COUT=1µF)
100
1
VOUT2
0
Figure 49. Cross Talk 9
(Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA,
1.8V/2.8V
(Channel 1/Channel 2)
0
200
Time (100µs/Div)
(Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA,
CIN=COUT=1µF)
2
50
-100
Time (100µs/Div)
3
100
∆VOUT1
-50
∆VOUT2 (50mV/Div)
-50
100
150
1.8V/3.3V
(Channel 1/Channel 2)
IOUT2 (100mA/Div)
∆VOUT1
50
∆VOUT1 (50mV/Div)
0
150
IOUT1 (100mA/Div)
1.8V/2.8V
(Channel 1/Channel 2)
∆VOUT2 (50mV/Div)
50
IOUT2 (100mA/Div)
IOUT1 (100mA/Div)
∆VOUT1 (50mV/Div)
Typical Performance Characteristics (Continued)
10
1
Stable Area
0.1
0.01
0
25
50
75
100
125
150
175
200
Output Current (mA)
Time (10µs/Div)
Figure 50. Enable Voltage vs. Output Voltage
(Conditions: VCE1=VCE2=0 to 2V, IOUT=0mA, CIN=COUT=1µF)
Feb. 2012 Rev. 1. 8
Figure 51. ESR vs. Output Current
BCD Semiconductor Manufacturing Limited
18
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Performance Characteristics (Continued)
100
100
1.8V (Channel 1)
VIN=2.8V
90
80
IOUT=30mA
80
COUT=1µF
70
PSRR (dB)
PSRR (dB)
70
60
50
40
40
30
20
10
10
1k
10k
0
10
100k
COUT=1µF
50
20
100
IOUT=30mA
60
30
0
10
2.5V (Channel 2)
VIN=3.5V
90
100
Figure 52. PSRR vs. Frequency
100k
100
2.8V (Channel 2)
VIN=3.8V
90
80
80
COUT=1µF
PSRR (dB)
50
40
50
40
30
20
20
10
10
10k
COUT=1µF
60
30
1k
IOUT=30mA
70
60
100
3.3V (Channel 2)
VIN=4.3V
90
IOUT=30mA
70
PSRR (dB)
10k
Figure 53. PSRR vs. Frequency
100
0
10
1k
Frequency (Hz)
Frequency (Hz)
0
10
100k
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 54. PSRR vs. Frequency
Figure 55. PSRR vs. Frequency
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
19
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Typical Application
V IN
AP2401B12
VIN =3.5V
CE1
VOUT1=1.8V
VOUT 1
VOUT1
COUT1
VIN
1µF
GND
CIN
1µF
VOUT 2 =2.5V
VOUT2
CE2 VOUT2
COUT2
1µF
Figure 56. Typical Application of AP2401
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
20
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Mechanical Dimensions
SOT-23-6
Unit: mm(inch)
0°
2.820(0.111)
8°
3.020(0.119)
0.300(0.012)
0.400(0.016)
5
4
2
3
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
2.650(0.104)
2.950(0.116)
6
0.200(0.008)
Pin 1 Mark
1
0.700(0.028)REF
0.950(0.037)TYP
0.000(0.000)
0.150(0.006)
1.800(0.071)
2.000(0.079)
0.100(0.004)
0.200(0.008)
0.900(0.035) 1.450(0.057)
MAX
1.300(0.051)
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
21
PART IS OBSOLETE
PLEASE USE AP7312
Data Sheet
200mA DUAL CHANNEL CMOS LDO REGULATOR
AP2401
Mechanical Dimensions (Continued)
DFN-1.8x2-6
1.700(0.067)
1.900(0.075)
Unit: mm(inch)
0.500(0.020)
N4
TYP
N6
0.180(0.007)
0.280(0.011)
0.200(0.008)
MIN
1.900(0.075)
2.100(0.083)
0.900(0.035)
REF
N3
Pin 1 Mark
N1
1.400(0.055)
REF
0.174(0.007)
0.326(0.013)
0.000(0.000)
0.050(0.002)
0.550(0.022)
0.650(0.026)
0.150(0.006)
REF
Feb. 2012 Rev. 1. 8
BCD Semiconductor Manufacturing Limited
22
PART IS OBSOLETE
PLEASE USE AP7312
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT
IMPORTANT NOTICE
NOTICE
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifiBCD
cations herein.
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
cations
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
particular purpose,
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of
circuits. BCD
of any
any its
its products
products or
or circuits.
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other
rights of
of others.
others.
other rights
rights nor
nor the
the rights
MAIN
SITE
MAIN SITE
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788