AP3407AKTR-G1

AP3407AKTR-G1

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT23-5

  • 描述:

    AP3407/A是一款1.4MHz固定频率、电流模式PWM同步降压DC-DC转换器,能够驱动1.2A负载,具有高效率、良好的线路和负载调节性能。集成低导通电阻的P沟道和N沟道MOSFET开关,适用于便...

  • 详情介绍
  • 数据手册
  • 价格&库存
AP3407AKTR-G1 数据手册
Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A General Description Features The AP3407/A is a 1.4MHz fixed frequency, current mode, PWM synchronous buck (step-down) DC-DC converter, capable of driving a 1.2A load with high efficiency, excellent line and load regulation. The device integrates synchronous P-channel and N-channel power MOSFET switches with low on-resistance. It is ideal for powering portable equipment that runs from a single Li-ion battery. • • • • • • • • • • • • • A standard series of inductors are available from several different manufacturers optimized for use with the AP3407/A. This feature greatly simplifies the design of switch-mode power supplies. The AP3407/A is available in SOT-23-5. Input Voltage Range: 2.5V to 5.5V Output Voltage: 0.6V to VIN ADJ Output Fixed 1.4MHz Frequency High Efficiency up to 95% Output Current: 1.2A Current Mode Control 100% Duty Cycle in Dropout Built-in Over Current Protection Built-in Short Circuit Protection Built-in Thermal Shutdown Protection Built-in UVLO Function Built-in Soft-start Applications • • • Datacom Portable Device Smart Phone SOT-23-5 Figure 1. Package Type of AP3407/A Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Pin Configuration K Package (SOT-23-5) EN 1 GND 2 SW 3 5 4 FB VIN (For AP3407) VIN 1 GND 2 EN 3 5 SW 4 FB (For AP3407A) Figure 2. Pin Configuration of AP3407/A (Top View) Pin Description Pin Number Pin Name AP3407 Function AP3407A Control input pin. Forcing this pin above 1.5V enables the IC. Forcing this pin below 0.4V shuts down the IC. When the IC is in shutdown mode, all functions are disabled to decrease the supply current below 1.2A Ground pin 1 3 EN 2 2 GND 3 5 SW Power switch output pin. Inductor connection to drain of the internal PFET and NFET switches 4 1 VIN Supply input pin. Bypass to GND with a 4.7µF or greater ceramic capacitor FB This is the feedback pin of the device. Connect this pin directly to the output if the fixed output voltage version is used. For the adjustable version an external resistor divider is connected to this pin. 5 Dec. 2011 4 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Functional Block Diagram Figure 3. Functional Block Diagram of AP3407/A Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Ordering Information AP3407 G1: Green Circuit Type TR: Tape & Reel Blank: AP3407 A: AP3407A K: SOT-23-5 Package Temperature Range SOT-23-5 -40 to 85 ºC Part Number Marking ID Green Green AP3407KTR-G1 AP3407AKTR-G1 GJA GJB Packing Type Tape & Reel Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN -0.3 to 6.0 V Feedback Voltage VFB -0.3 to VIN +0.3 V EN Pin Voltage VEN -0.3 to VIN+0.3 V SW Pin Voltage Thermal Resistance Thermal Resistance Power Dissipation Operating Junction Temperature VSW θJA θJC PD TJ -0.3 to VIN+0.3 265 60 0.377 150 V ºC/W ºC/W W ºC Storage Temperature TSTG -65 to 150 ºC Lead Temperature (Soldering, 10sec) TLEAD 260 ºC Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The junction temperature rise is given by TRISING=PD*θJA, where PD is the power dissipated by regulator, θJA is the thermal resistance from junction of the die to the ambient temperature; The junction temperature, TJ is given by TJ=TA+TR, where TA is the ambient temperature. Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2.5 5.5 V IOUT (MAX) 1.2 TA -40 Maximum Output Current Operating Ambient Temperature A 85 ºC Electrical Characteristics VIN=VDD =VPVDD=3.3V, TA=25℃, unless otherwise specified. Parameters Symbol Input Voltage VIN Quiescent Current Shutdown Supply Current Conditions Typ 2.5 Max Unit 5.5 V IQ VFB=0.65V 62 100 µA ISTBY VEN=GND 0.1 1 µA 0.6 0.612 V -0.1 0.1 µA -2 2 % Reference Voltage VREF For Adjustable Output Voltage Feedback Bias Current IFB VFB=VIN Output Voltage Accuracy Min ∆VOUT 0.588 PMOSFET RON RDS(ON)_ P ISW = 200mA 0.28 Ω NMOSFET RON RDS(ON) _N ISW = -200mA 0.25 Ω 2.0 A Switch Current Limit ILIM VFB=0.55V VH 1.5 1.5 EN Pin Threshold V VL UVLO Threshold VUVLO UVLO Hysteresis VHYS Oscillator Frequency fOSC 0.4 VDD Rising 2.3 V 0.2 1.12 Max. Duty Cycle DMAX VFB=0V Min. Duty Cycle DMIN VFB=6.5V 1.40 1.68 MHz 100 % N-MOS Current SW Leakage 0 0.1 µA t 1 ms Thermal Shutdown TOTSD 160 ºC Thermal Hysteresis THYS 20 ºC Soft-start Time Dec. 2011 Shutdown VIN=3.3V, VSW=3.3V Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Typical Performance Characteristics 100 95 96 90 80 Efficiency (%) Efficiency (%) 85 75 70 65 60 88 80 VOUT=2.5V 55 50 VIN=3.3V 45 VOUT=2.5V 40 200 400 600 800 IOUT=0.5A 72 1000 IOUT=1.0A 2 1200 3 4 5 6 Input Voltage (V) Output Current (mA) Figure 5. Efficiency vs. Input Voltage Figure 4. Efficiency vs. Output Current 1.8 2.51 2.50 Frequency (MHz) Output Voltage (V) 1.7 2.49 2.48 VIN=3.3V 1.6 1.5 1.4 IOUT=300mA VOUT=2.5V 2.47 1.3 200 400 600 800 1000 1200 2.5 Output Current (mA) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Input Voltage (V) Figure 6. Output Voltage vs. Output Current Dec. 2011 3.0 Figure 7. Frequency vs. Input Voltage Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Typical Performance Characteristics (Continued) 1.7 0.62 0.61 Feedback Voltage (V) Frequency (MHz) 1.6 1.5 1.4 1.3 VIN=3.3V 0.60 0.59 0.58 VOUT=2.5V VIN=3.3V 1.2 -40 0 40 80 120 0.57 160 -40 0 40 O Temperature ( C) 120 160 Figure 9. Feedback Voltage vs. Temperature 2.2 0.5 2.0 0.4 1.8 0.3 RDS(ON)-UP (Ω) OCP Current Limit (A) Figure 8. Frequency vs. Temperature 1.6 1.4 80 O Temperature ( C) 0.2 0.1 VIN=3.3V VIN=3.3V VFB=0.55V ISW=200mA 1.2 0.0 -40 0 40 80 120 160 -40 O 40 80 120 160 Temperature ( C) Figure 10. OCP Current Limit vs. Temperature Dec. 2011 0 O Temperature ( C) Figure 11. RDS (ON)_UP vs. Temperature Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Typical Performance Characteristics (Continued) 0.32 RDS(ON)-Low (Ω) 0.28 0.24 0.20 0.16 VIN=3.3V ISW=200mA 0.12 -40 0 40 80 120 160 O Temperature ( C) Figure 12. RDS (ON)_LOW vs. Temperature Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Typical Application R2 VIN EN R1 FB SW AP3407/A-ADJ CIN VOUT L VIN 2.2 H COUT F GND F Figure 13. Typical Application of AP3407/A Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter AP3407/A Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) Dec. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788
AP3407AKTR-G1
物料型号:AP3407/A 器件简介:1.4MHz 固定频率、电流模式、PWM 同步降压 DC-DC 转换器,能够驱动高达 1.2A 的负载,具有高效率和优良的线路与负载调整率。该设备集成了低导通电阻的同步 P 沟道和 N 沟道功率 MOSFET 开关,非常适合为从单个锂离子电池运行的便携设备供电。 引脚分配:共 5 个引脚,包括使能控制输入引脚 EN、接地引脚 GND、电源开关输出引脚 SW、供电输入引脚 VIN 和反馈引脚 FB。 参数特性: - 输入电压范围:2.5V 至 5.5V - 输出电压:0.6V 至 VIN - 固定 1.4MHz 频率 - 高效率,最高可达 95% - 内置过流保护、短路保护、热关闭保护、内置 UVLO 功能和软启动 功能详解:具有电流模式控制、100% 占空比在 dropout 时、内置保护电路等。 应用信息:适用于数据通信、便携设备、智能手机等。 封装信息:提供 SOT-23-5 封装。

绝对最大额定值包括输入电压 -0.3 至 6.0V,热阻 265°C/W,存储温度 -65 至 150℃,焊接时的引脚温度 260℃ 等。推荐的工作条件为输入电压 2.5 至 5.5V,最大输出电流 1.2A,工作环境温度 -40 至 85℃。

电气特性包括在 VIN=VDD=VPVDD=3.3V,TA=25℃ 下的输入电压、静态电流、关闭电源电流、参考电压、反馈偏置电流、输出电压精度、PMOSFET 和 NMOSFET 的导通电阻、开关电流限制、使能引脚阈值、UVLO 阈值、振荡器频率、最大和最小占空比、N-MOSFET 漏电流、软启动时间、热关闭和关闭热滞后等参数。
AP3407AKTR-G1 价格&库存

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