APT17

Data Sheet HIGH VOLTAGE NPN TRANSISTOR General Description The APT17 is high voltage, small signal NPN transistor. The APT17 is available in SOT-23 and TO-92 packages. APT17 Features · High Collector-Emitter Voltage: 480V Applications · High Voltage and Low Standby Power Circuit for BCD Solution SOT-23 TO-92 TO-92 Ammo packing Figure 1. Package Types of APT17 Pin Configuration N Package (SOT-23) Collector 3 Z Package (TO-92) (TO-92 Ammo Package) Base Collector Emitter 3 2 Base Collector Emitter 3 2 1 1 2 1 Base Emitter Figure 2. Pin Configurations of APT17 (Top View) May. 2009 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR Ordering Information APT17 Circuit Type Package N: SOT-23 Z: TO-92 G1: Green TR: Tape & Reel or Ammo Blank: Bulk APT17 Package SOT-23 TO-92 Part Number APT17NTR-G1 APT17Z-G1 APT17ZTR-G1 GD8 Marking ID APT17Z-G1 APT17Z-G1 Packing Type Tape & Reel Bulk Ammo BCD Semi con ductor's prod ucts, as d esi gnated wi th "G1" su ffix in t he part numb er, are RoHS compliant and Green. Absolute Maximum Ratings (Note 1) Parameter Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (Pulse) Base Current Base Peak Current (Pulse) Power Dissipation, TA=25oC Operating Junction Temperature Storage Temperature Range SOT-23 TO-92 Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Value 700 480 10 50 100 25 50 0.2 0.5 150 -55 to 150 Unit V V V mA mA mA mA W o C oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. May. 2009 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR Thermal Characteristics Parameter Thermal Resistance (Junction-to-Ambient) SOT-23 TO-92 θJA Symbol Value 625 250 Unit oC/W APT17 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) DC Current Gain Symbol ICEV VCEO (sus) hFE Conditions VCE=700V IC=300µA IC=300µA, VCE=20V IC=10mA, VCE=20V 480 20 20 25 40 50 Min Typ Max 10 Unit µA V May. 2009 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Typical Performance Characteristics 35 VCE=20V 30 100 VCE=20V TJ=125 C 0 DC Current Gain hFE 25 TJ=25 C 0 Instantanous Reverse Current(µA) TJ=150 C 10 0 TJ=125 C 1 0 20 15 0.1 TJ=75 C 0 10 0.01 5 TJ=25 C 1E-3 20 40 60 80 100 120 0 0 1E-4 1E-3 0.01 0.1 Collector Current IC(A) Percent of Collector-Emitter Reverse voltage(%) Figure 3. DC Current Gain Figure 4. Typical Reverse Characteristics May. 2009 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions SOT-23 Unit: mm(inch) May. 2009 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continuted) TO-92 Unit: mm(inch) 1.100(0.043) 1.400(0.055) 3.430(0.135) MIN 0.360(0.014) 0.510(0.020) 3.300(0.130) 3.700(0.146) 0.000(0.000) 0.380(0.015) Φ1.600(0.063) MAX 4.400(0.173) 4.700(0.185) 4.300(0.169) 4.700(0.185) 0.380(0.015) 0.550(0.022) 1.270(0.050) TYP 2.440(0.096) 2.640(0.104) May. 2009 1. 1 6 14.100(0.555) 14.500(0.571) BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continuted) TO-92 Ammo Packing Unit: mm(inch) 12.400(0.488) 13.000(0.512) ±1.000(0.039) ΔP ±1.000(0.039) 4.400(0.173) 4.600(0.181) Δh 3.400(0.134) 3.600(0.142) 4.400(0.173) 4.600(0.181) 19.000(0.748) 21.000(0.827) 0.380(0.015) 0.550(0.022) 1.000 (0.039) MAX 5.500(0.217) 6.500(0.256) 6.050(0.238) 6.650(0.262) 2.200(0.087) 2.800(0.110) 2.200(0.087) 2.800(0.110) 15.500(0.610) 16.500(0.650) 2.500(0.098) MIN 8.500(0.335) 9.500(0.374) 3.550(0.140) 4.150(0.163) 3.800(0.150) 4.200(0.165) 17.500(0.689) 19.000(0.748) 12.500(0.492) 12.900(0.508) 0.150(0.006) 0.250(0.010) 0.350(0.014) 0.450(0.018) May. 2009 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information 2.90 2.50 Solder Lands 1.70 2.70 1.30 Solder Resist Solder Paste Occupied Area 0.60 (3X) Dimensions in mm 0.50(3X) 0.60 (3X) 1.0 3.30 Figure 5. Reflow Soldering Footprint SOT-23 May. 2009 1. 1 8 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information(Continuted) Solder Lands Solder Resist Occupied Area 1.20 4.00 Dimensions in mm Preferred transport direction during soldering 2.80 4.50 Figure 6. Waving Soldering Footprint SOT-23 May. 2009 1. 1 9 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com I MPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. 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