AS358AM-E1

Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description The AS358/358A consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. The AS358/358A series are compatible with industry standard 358. AS358A has more stringent input offset voltage than AS358. The AS358 is available in DIP-8, SOIC-8, TSSOP-8 and MSOP-8 packages, AS358A is available in DIP-8 and SOIC-8 packages. AS358/358A Features · · · · · · Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage: Single Supply: 3V to 36V Dual Supplies: ±1.5V to ±18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC -1.5V · · Applications · · · Battery Charger Cordless Telephone Switching Power Supply SOIC-8 DIP-8 TSSOP-8 MSOP-8 Figure 1. Package Types of AS358/358A Sep. 2006 Rev. 1. 6 1 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Pin Configuration M/P/G/MM Package (SOIC-8/DIP-8/TSSOP-8/MSOP-8) OUTPUT 1 INPUT 1INPUT 1+ GND 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ AS358/358A Figure 2. Pin Configuration of AS358/358A (Top View) Functional Block Diagram VCC 6µA 4µA 100µA Q5 Q6 Q2 INPUTS + Q10 Q8 Q9 Q1 Q3 Q4 Rsc OUTPUT Cc Q7 Q11 Q12 50µA Q13 Figure 3. Functional Block Diagram of AS358/358A (Each Amplifier) Sep. 2006 Rev. 1. 6 2 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Ordering Information Circuit Type Blank: AS358 A: AS358A AS358 AS358/358A E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 G: TSSOP-8 MM: MSOP-8 Package Temperature Range Part Number Tin Lead AS358M Lead Free AS358M-E1 AS358MTR-E1 AS358AM-E1 AS358AMTR-E1 Marking ID Tin Lead AS358M AS358M Lead Free AS358M-E1 AS358M-E1 AS358AM-E1 AS358AM-E1 AS358P AS358P-E1 AS358AP-E1 EG3A EG3A AS358MM-E1 AS358MM-E1 Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tube Tube Tape & Reel Tube Tape & Reel SOIC-8 -40 to 85oC AS358MTR DIP-8 -40 to 85oC -40 to 85oC -40 to 85oC AS358P AS358P-E1 AS358AP-E1 AS358G-E1 AS358GTR-E1 AS358MM-E1 AS358MMTR-E1 TSSOP-8 MSOP-8 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Sep. 2006 Rev. 1. 6 3 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Differential Input Voltage Input Voltage Symbol VCC VID VIC DIP-8 SOIC-8 Value 40 40 -0.3 to 40 830 550 Unit V V V AS358/358A Power Dissipation (TA=25oC) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) PD TSSOP-8 MSOP-8 150 -65 to 150 260 500 470 mW TJ TSTG TLEAD oC oC oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol VCC TA Min 3 -40 Max 36 85 Unit V oC Sep. 2006 Rev. 1. 6 4 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless otherwise specified. Parameter Symbol Test Conditions VO=1.4V, RS=0Ω, VCC=5V to 30V AS358 AS358A Min Typ 2 2 Max 5 7 3 5 7 20 5 200 200 30 100 0 0.7 0.5 85 80 60 60 70 60 -120 20 20 10 5 12 50 40 26 26 27 27 5 20 30 mV 28 V 60 15 40 100 70 100 VCC -1.5 AS358/358A Unit Input Offset Voltage VIO mV Average Temperature Coefficient of Input Offset Voltage Input Bias Current Input Offset Current Input Common Mode Voltage Range (Note 3) Supply Current Large Signal Voltage Gain Common Ratio Power Ratio Mode Supply Rejection Rejection ∆VIO/∆T TA=-40 to 85oC IBIAS IIO VIR ICC GV CMRR PSRR CS IIN+ or IIN-, VCM=0V IIN+ - IIN-, VCM=0V VCC=30V TA=-40 to 85oC, RL=∞, VCC=30V TA=-40 to 85oC, RL=∞, VCC=5V VCC=15V, VO=1V to 11V, RL ≥ 2kΩ DC, VCM=0V to (VCC-1.5)V VCC=5V to 30V f=1kHz to 20kHz µV/oC nA nA V mA dB dB dB dB mA mA µA mA 2 1.2 Channel Separation Source Output Current Sink Output Short Circuit Current to Ground ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=2V VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V ISC VCC=15V VCC=30V, RL=2kΩ VOH ISINK Output Voltage Swing VOL VCC=30V, RL=10kΩ VCC=5V, RL= 10kΩ Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Sep. 2006 Rev. 1. 6 5 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics (Continued) Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +36V without damages, independent of the magnitude of the VCC. AS358/358A Typical Performance Characteristics 15 20 18 16 Input Voltage (+VDC) 10 Input Current (nA) 15 14 12 10 8 6 4 2 NEGATIVE POSITIVE 5 0 0 5 10 0 -25 0 25 50 o 75 100 125 Power Supply Voltage (+VDC) Temperature ( C) Figure 4. Input Voltage Range Figure 5. Input Current 1.0 0.9 0.8 120 105 Supply Current (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 Voltage Gain (dB) 0.7 90 RL=2KΩ RL=20KΩ 75 60 0 8 16 24 32 40 Supply Voltage (V) Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain Sep. 2006 Rev. 1. 6 6 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AS358/358A 120 110 100 90 4 Output Voltage (V) Input Voltage (V) 3 2 1 0 3 2 1 0 0 4 8 12 16 20 24 28 32 36 40 Voltage Gain (dB) 80 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Time (µs) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response 800 700 20 Output Voltage (mV) 600 500 400 300 200 100 0 4 Output Swing (V) 15 10 5 8 12 16 20 0 1k 10k 100k 1M Time (µs) Frequency (Hz) Figure 10. Voltage Follower Pulse Response (Small Signal) Figure 11. Large Signal Frequency Response Sep. 2006 Rev. 1. 6 7 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AS358/358A 8 10 Output Voltage Referenced to Vcc (V) 7 6 5 4 3 2 1 0 0.1 0.01 1E-3 Output Voltage (V) 1 VCC=5V 0.1 VCC=15V 1 10 100 0.01 0.1 1 10 100 Output Source Current (mA) Output Sink Current (mA) Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking 100 90 80 Output Current (mA) 70 60 50 40 30 20 10 0 -25 0 25 50 o 75 100 125 Temperature ( C) Figure 14. Current Limiting Sep. 2006 Rev. 1. 6 8 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application R1 AS358/358A Opto Isolator R6 VCC 1/2 AS358/A - AC Line SMPS + GND R7 Battery Pack R3 R4 R5 Current R2 Sense AZ431 VCC 1/2 AS358/A + GND R8 Figure 15. Battery Charger R1 910K R1 100k R2 100K 1/2 AS358/A R3 91K VIN(+) + RL VO VCC +V1 +V2 R2 100k R3 100k +V3 +V4 R4 100k R5 100k + 1/2 AS358/A R6 100k VO Figure 16. Power Amplifier Figure 17. DC Summing Amplifier Sep. 2006 Rev. 1. 6 9 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application (Continued) AS358/358A R1 100k C1 0.1µF R2 1M + 2V - VCC + 2V - 1/2 AS358/A + CO RB 6.2k R4 100k VCC R5 100k AV=1+R2/R1 R3 2K R1 2K R2 VO RL 10k 1/2 AS358/A + R4 3K I1 1mA I2 CIN AC R3 1M C2 10µF AV=11 (As shown) Figure 18. AC Coupled Non-Inverting Amplifier Figure 19. Fixed Current Sources R1 1M C1 0.01µF 0.001µF R2 100k 1/2 AS358/A + R3 100k VCC R4 100k R5 100k VO R1 16K VIN R2 16k + C2 0.01µF 1/2 AS358/A R3 100k VO VO 0 fO R4 100k fO=1kHz Q=1 AV=2 Figure 20. Pulse Generator Figure 21. DC Coupled Low-Pass Active Filter Sep. 2006 Rev. 1. 6 10 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AS358/358A 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 6° 5° 3.710(0.146) 4.310(0.170) 4° 3.200(0.126) 3.600(0.142) 4° 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Sep. 2006 Rev. 1. 6 11 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AS358/358A 4.700(0.185) 5.100(0.201) 7° 1.350(0.053) 1.750(0.069) 0.320(0.013) 8° 7° 8° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) φ 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0° 8° 0.330(0.013) 0.510(0.020) 0.900(0.035) 1° 5° R0.150(0.006) 0.190(0.007) 0.250(0.010) Sep. 2006 Rev. 1. 6 12 BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) AS358/358A 2.900(0.114) 3.100(0.122) SEE DETAIL A 0.050(0.002) 0.150(0.006) 0.800(0.031) 1.050(0.041) 1.200(0.047) MAX 0.090(0.004) 0.200(0.008) 12 ° TOP & BOTTOM R0.090(0.004) φ 4.300(0.169) 4.500(0.177) 6.400(0.252) R0.090(0.004) TYP GAGE PLANE 0° 8° 0.400(0.016) SEATING PLANE 0.190(0.007) 0.300(0.012) 1.950(0.077) TYP DETAIL A 0.250(0.010) TYP 0.450(0.018) 0.750(0.030) 1.000(0.039) REF Sep. 2006 Rev. 1. 6 13 0.650(0.026) TYP BCD Semiconductor Manufacturing Limited Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions MSOP-8 Unit: mm(inch) AS358/358A 0.300(0.012)TYP 0.650(0.026)TYP 0.150(0.006)TY P 0.410(0.016) 0.650(0.026) 4.700(0.185) 5.100(0.201) 2.900(0.114) 3.100(0.122) 0° 6° 0.760(0.030) 0.970(0.038) 0.800(0.031) 1.200(0.047) 2.900(0.114) 3.100(0.122) ` Sep. 2006 Rev. 1. 6 14 0.200(0.008) 0.000(0.000) BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A