ASMCC0183-7

ASMCC0096 APPLICATION SPECIFIC MULTI CHIP CIRCUIT ASMCCTM Features · · · Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free Product SOT-363 A B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Marking: A96 Date Code & Marking Information: See Page 2 Weight: 0.008 grams (approx.) G H K M J D L F Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm K1 NC E1 UDZ5V6B MMBT3904 A1 B1 C1 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Maximum Ratings, NPN Transistor Element Characteristic Symbol Value Pd 200 Unit mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Symbol Value Unit VF 0.9 V Collector Current - Continuous (Note 1) Maximum Ratings, Zener Element @ TA = 25°C unless otherwise specified Characteristic Forward Voltage Notes: @ IF = 10mA 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30379 Rev. 3 - 2 1 of 5 www.diodes.com ASMCC0096 ã Diodes Incorporated Electrical Characteristics, NPN Transistor Element Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Rise Time TA = 25°C specified t@ ¾ unless otherwise 35 ns d VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA tr ¾ 35 ns Storage Time ts ¾ 200 ns Fall Time tf ¾ 50 ns Delay Time VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Electrical Characteristics, Zener Element @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 2) Type Number VZ @ IZT IZT Nom (V) Min (V) Max (V) mA 5.6 5.49 5.73 5 UDZ5V6B Notes: Maximum Zener Impedance ZZT @ IZT ZZK @ IZK = 0.5mA IR mA V 200 1.0 2.5 W 60 Maximum Reverse Leakage Current @VR 2. Short duration test pulse used to minimize self-heating effect. DS30379 Rev. 3 - 2 2 of 5 www.diodes.com ASMCC0096 Ordering Information Notes: (Note 3) Device Packaging Shipping ASMCC0096-7 SOT-363 3000/Tape & Reel ASMCC0096-13 SOT-363 10,000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information A96 A96 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30379 Rev. 3 - 2 3 of 5 www.diodes.com ASMCC0096 MMBT3904 Section 200 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) f = 1MHz 150 100 50 10 5 Cibo Cobo 0 0.1 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 1000 10 100 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (Transistor Element) TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (Transistor Element) 0.1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (Transistor Element) 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (Transistor Element) DS30379 Rev. 3 - 2 4 of 5 www.diodes.com ASMCC0096 IF, INSTANTANEOUS FORWARD CURRENT (mA) UDZ5V6B Section 1000 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 6 Typical Forward Characteristics DS30379 Rev. 3 - 2 5 of 5 www.diodes.com ASMCC0096 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Inc.: ASMCC0183-7