AZ386M

Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER General Description The AZ386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pin 1 and pin 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only 24mW when operating from a 5V supply, making the AZ386 ideal for battery operation. This IC is available in SOIC-8 and DIP-8 packages. AZ386 Features · · · · · · · Wide Supply Voltage Range: 4V to 16V Low Quiescent Current Drain: 6mA Voltage Gains from 20 to 200 Battery Operation Minimum External Parts Low Power Dissipation Low Distortion Applications · · · · · · · · · AM-FM Radio Amplifier Cordless Phone TV Sound Systems Portable Tape Player Amplifier Intercoms Line Drivers Ultrasonic Drivers Small Servo Drivers Power Converters SOIC-8 DIP-8 Figure 1. Package Types of AZ386 Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Pin Configuration M Package/P Package (SOIC-8/DIP-8) GAIN INPUT INPUT + GND 1 2 3 4 8 7 6 5 GAIN BYPASS VCC VOUT AZ386 Top View Figure 2. Pin Configuration of AZ386 Functional Block Diagram GAIN 8 GAIN 1 6 7 BYPASS 15KΩ 5 150Ω 1.35KΩ 15KΩ VOUT 15KΩ VCC 2 INPUT - 50KΩ 50KΩ 4 3 INPUT + GND Figure 3. Functional Block Diagram of AZ386 Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Ordering Information AZ386 AZ386 Circuit Type E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 Package Temperature Range 0 to 70oC 0 to 70 C o Part Number Tin Lead AZ386M AZ386MTR AZ386P Lead Free AZ386M-E1 AZ386MTR-E1 AZ386P-E1 Marking ID Tin Lead 386M 386M AZ386P Lead Free 386M-E1 386M-E1 AZ386P-E1 Packing Type Tube Tape & Reel Tube SOIC-8 DIP-8 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Package Dissipation (Note 2) Input Voltage Junction Temperature Storage Temperature Range Symbol VCC PD VIN TJ TSTG AZ386P AZ386M -0.4 to 0.4 150 -55 to 150 DIP-8 Soldering (10 sec.) SOIC-8 (15 sec.) Thermal Resistance θJA DIP-8 SOIC-8 260 215 107 172 oC/W AZ386 Value 18 1.25 0.73 Unit V W W V o o C C C Soldering Information o Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: For operation in ambient temperatures (TA) above 25oC, the device must be derated based on a 150oC maximum junction temperature and 1) a thermal resistance of 107oC/W junction to ambient for the Dual-in-Line package and 2) a thermal resistance of 172oC/W for the small outline package. Recommended Operating Conditions Parameter Operating Temperature Range Min 0 Max 70 Unit o C Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Electrical Characteristics (Note 3) Operating Conditions: TA=25oC unless otherwise specified. Parameter Supply Voltage Quiescent Current Symbol VCC IQ VCC=6V, VIN=0 VCC=6V, RL=8Ω, THD=10% Output Power POUT VCC=9V, RL=8Ω, THD=10% VCC=16V, RL=32Ω, THD=10% Voltage Gain Bandwidth Total Harmonic Distortion Power Supply Rejection Ratio Input Resistance Input Bias Current GV BW THD PSRR RIN IBIAS VCC=6V, Pins 2 and 3 open VCC=6V, f=1KHz 10µF from Pin 1 to 8 VCC=6V, Pins 1 and 8 open VCC=6V, RL=8Ω, POUT=125mW f=1KHz, Pins 1 and 8 open VCC=6V, f=1KHz, CBYPASS=10µF, Pins 1 and 8 open, Referred to Output Test Conditions Min Typ Max Unit AZ386 4 6 250 500 700 300 800 1000 26 45 500 0.27 45 70 10 16 8 V mA mW mW mW dB dB KHz % dB KΩ nA Note 3: All voltages are measured with respect to the ground pin, unless otherwise specified. Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Performance Characteristics 8 16 14 12 10 8 6 4 2 0 AZ386 7 6 5 AZ386 4 Output Voltage (V) (peak to peak) Supply Current (mA) 3 2 AZ386 RL=4Ω AZ386 RL=8Ω AZ386 RL=16Ω AZ386 RL=32Ω 4 5 6 7 8 1 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) 9 10 11 12 13 14 15 16 Figure 4. Quiescent Supply Current vs. Supply Voltage 60 Figure 5. Peak-to-Peak Output Voltage Swing vs. Supply Voltage 1.2 50 1.0 AZ386 VCC=6V RL=8Ω POUT=125mW C1,8=0 Voltage Gain (dB) 40 0.8 THD (%) AZ386 C1,8=0 AZ386 C1,8=10u 30 0.6 20 0.4 10 0.2 0 100 1k 10k 100k 1M 0.0 10 100 Frequency (Hz) Frequency (Hz) 1k 10k Figure 6. Voltage Gain vs. Frequency 10 9 Figure 7. Distortion vs. Frequency 2.0 1.8 Device Dissipation (W) 8 7 AZ386 VCC=6V RL=8Ω f=1KHz 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 RL=4Ω AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V THD (%) 6 5 4 3 2 1 0 1 10 Power Out (mW) 100 1,000 0.1 0.2 0.3 0.4 0.5 Output Power (W) Figure 8. Distortion vs. Output Power Figure 9. Device Dissipation vs. Output Power (4Ω Load) Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Performance Characteristics (Continued) 2.0 1.8 AZ386 Device Dissipation (W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 RL=8Ω Device Dissipation (W) AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V 1.0 0.8 0.6 0.4 0.2 AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V RL=16Ω 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.0 Output Power (W) Output Power (W) Figure 10. Device Dissipation vs. Output Power (8Ω Load) Figure 11. Device Dissipation vs. Output Power (16Ω Load) Typical Applications VCC VCC 10µF + 6 2 1 8 250µF 6 2VIN 10KΩ 3 + 4 AZ386 0.05µF 7 10Ω AZ386 1 8 250µF + 5 VIN 10KΩ 3 + 4 + 7 BYPASS 5 0.05µF 10Ω Figure 12. Amplifier With Gain=20 Figure 13. Amplifier With Gain=200 Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Applications (Continued) AZ386 VCC 1.2KΩ 6 2 VIN 10KΩ 3 + 4 BYPASS AZ386 7 0.05µF 10Ω 1 8 VCC 390Ω + + 10µF ELDEMA CF-S-2158 2- 6 1 10µF 8 50µF 250µF + 5 3V - 15mA 3 + AZ386 0.01µF 7 BYPASS 47KΩ 0.01µF + 5 0.05µF 10Ω VO RL 4.7KΩ Figure 14. Amplifier With Gain=50 Figure 15. Low Distortion Power Wienbridge Oscillator VCC 2 VCC 6 30KΩ 1 8 AZ386 5 3 + 4 7 RL 50µF VO 6 2 AZ386 3 + 4 8 10KΩ 1 0.033µF 250µF V O - 0.1µF + VIN 10KΩ + 5 0.05µF 7 10Ω RL 1KΩ 10KΩ f = 1KHz Figure 16. Amplifier With Bass Boost Figure 17. Square Wave Oscillator Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Mechanical Dimensions SOIC-8 Unit: mm(inch) AZ386 4.700(0.185) 5.100(0.201) 7° 1.350(0.053) 1.750(0.069) 0.320(0.013) 8° 7° 8° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) φ 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0° 8° 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1° 5° R0.150(0.006) 0.450(0.017) 0.800(0.031) Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Mechanical Dimensions (Continued) DIP-8 Unit: mm(inch) AZ386 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 6° 5° 3.710(0.146) 4.310(0.170) 4° 3.200(0.126) 3.600(0.142) 4° 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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