AZ386P-E1

NOT RECOMMENDED FOR NEW DESIGN USE PAM8304 AZ386 LOW VOLTAGE AUDIO POWER AMPLIFIER Description The AZ386 is a power amplifier designed for use in consumer applications. The gain is internally set to external part count low, but the addition of an external capacitor between pin 1 and pin 8 will increase the gain from 20 to 200. Pin Assignments low voltage 20 to keep resistor and to any value The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only 24mW when opera-ting from a 5V supply, making the AZ386 ideal for battery operation. (Top View) (Top View) GAIN 1 8 GAIN BYPASS INPUT- 2 7 BYPASS 6 VCC INPUT+ 3 6 VCC 5 VOUT GND 4 5 VOUT GAIN 1 8 GAIN INPUT- 2 7 INPUT+ 3 GND 4 SOIC-8 DIP-8 This IC is available in SOIC-8 and DIP-8 packages. Applications Features         Wide Supply Voltage Range: 4V to 16V Low Quiescent Current Drain: 6mA Voltage Gains from 20 to 200 Battery Operation Minimum External Parts Low Power Dissipation Low Distortion For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ AZ386 Document number: DS43294 Rev. 1 - 3          AM-FM Radio Amplifier Cordless Phone TV Sound Systems Portable Tape Player Amplifier Intercoms Line Drivers Ultrasonic Drivers Small Servo Drivers Power Converters 1 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Typical Applications Circuit (Note 1) VCC 6 2 1 - 250F 8 VIN + AZ386 0.05F 3 10K 5 + 7 10 4 Amplifier With Gain=20 Amplifier With Gain=200 + + 1.2K 10F ELDEMA CF-S-2158 6 2 10F 2 - 1 AZ386 7 + 0.05F 7 0.05F BYPASS 4 5 0.01F 3 VO + + 5 + 50F 8 AZ386 3V - 15mA 250F 8 VIN 10K 6 1 - 3 390 VCC VCC 47K BYPASS RL 10 10 0.01F 4.7K Amplifier With Gain=50 Low Distortion Power Wienbridge Oscillator VCC VCC 6 2 VO 5 3 250F VO + AZ386 + RL 7 4 5 0.05F + 50F + AZ386 8 1 10K 8 0.033F 10K - VIN 3 1 0.1F 6 2 30K - 7 4 10 RL 10K 1K f = 1KHz Amplifier With Bass Boost Square Wave Oscillator Note 1: The R-C series circuit from output to ground, which will make the output stable, is depended on the different capacitive load in the circuit, the correct values for the R and C can be determined through experimental methods. AZ386 Document number: DS43294 Rev. 1 - 3 2 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Functional Block Diagram Absolute Maximum Ratings (Note 2) Symbol Parameter VCC Power Supply Voltage PD Package Dissipation (Note 3) VIN Input Voltage TJ Junction Temperature TSTG Rating Unit 18 V AZ386P 1.25 W AZ386M 0.73 W Storage Temperature Range +150 o -55 to +150 o DIP-8 Soldering (10 sec.) – JA C C +260 o C Soldering Information SOIC-8 (15 sec.) +215 DIP-8 107 o C/W Thermal Resistance SOIC-8 Notes: V -0.4V to VIN+0.4V 172 2. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods can affect device reliability. 3. For operation in ambient temperatures (TA) above +25oC, the device must be derated based on a +150oC maximum junction temperature and 1) a thermal resistance of 107oC/W junction to ambient for the Dual-in-Line package and 2) a thermal resistance of 172oC/W for the small outline package. AZ386 Document number: DS43294 Rev. 1 - 3 3 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Recommended Operating Conditions Parameter Operating Temperature Range Min Max 0 +70 Unit o C Electrical Characteristics (Note 4) Operating Conditions: TA=+25oC, unless otherwise specified. Symbol VCC IQ POUT GV Parameter Test Conditions Min Typ Max Unit Supply Voltage – 4 – 16 V Quiescent Current VCC=6V, VIN=0 – 6 8 mA VCC=6V, RL=8, THD=10% 250 300 – mW VCC=9V, RL=8, THD=10% 500 800 – mW VCC=16V, RL=32, THD=10% 700 1000 – mW – 26 – dB – 45 – dB Output Power Voltage Gain VCC=6V, f=1KHz 10F from Pin 1 to 8 BW Bandwidth VCC=6V, Pins 1 and 8 open – 500 – KHz THD Total Harmonic Distortion VCC=6V, RL=8, POUT=125mW f=1KHz, Pins 1 and 8 open – 0.27 – % Power Supply Rejection Ratio VCC=6V, f=1KHz, CBYPASS=10F, Pins 1 and 8 open, Referred to Output – 45 – dB RIN Input Resistance – – 70 – K IBIAS Input Bias Current VCC=6V, Pins 2 and 3 open – 10 – nA PSRR Note 4: All voltages are measured with respect to the ground pin, unless otherwise specified. AZ386 Document number: DS43294 Rev. 1 - 3 4 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Performance Characteristics Peak-to-Peak Output Voltage Swing vs. Supply Voltage 8 16 7 14 Output Voltage (V) (peak to peak) Supply Current (mA) Quiescent Supply Current vs. Supply Voltage 6 5 AZ386 4 3 2 12 10 8 6 AZ386 RL=4 AZ386 RL=8 AZ386 RL=16 AZ386 RL=32 4 2 0 1 4 6 8 10 12 14 16 4 18 5 6 7 8 Supply Voltage (V) 60 1.2 50 1.0 40 0.8 30 20 11 12 13 14 15 16 AZ386 VCC=6V RL=8 POUT=125mW C1,8=0 0.6 0.4 AZ386 C1,8=0 AZ386 C1,8=10u 0.2 10 0 100 1k 10k 100k 0.0 10 1M 100 Frequency (Hz) Distortion vs. Output Power Frequency (Hz) 1k 10k Device Dissipation vs. Output Power (4 Load) 2.0 10 1.8 9 Device Dissipation (W) AZ386 VCC=6V RL=8 f=1KHz 8 7 THD (%) 10 Distortion vs. Frequency THD (%) Voltage Gain (dB) Voltage Gain vs. Frequency 9 Supply Voltage (V) 6 5 4 1.6 1.4 1.0 0.8 0.6 2 0.4 1 0.2 1 10 Power Out (mW) AZ386 Document number: DS43294 Rev. 1 - 3 100 1,000 5 of 10 www.diodes.com RL=4 1.2 3 0 AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V 0.0 0.0 0.1 0.2 0.3 0.4 0.5 Output Power (W) November 2020 © Diodes Incorporated AZ386 Performance Characteristics (continued) Device Dissipation vs. Output Power (8 Load) 2.0 1.6 0.8 Device Dissipation (W) Device Dissipation (W) 1.0 AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V 1.8 1.4 Device Dissipation vs. Output Power (16 Load) RL=8 1.2 1.0 0.8 0.6 0.6 0.4 0.4 AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V RL=16 0.2 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.0 1.0 0.2 0.4 Output Power (W) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Output Power (W) Ordering Information AZ386 X XX - XX Product Name Package Packing M: SOIC-8 P: DIP-8 TR: Tape & Reel Blank: Tube Part Number Package DIP-8 E1: RoHS Compliant G1: Green Marking ID Temperature Range Packing Type Lead Free SOIC-8 E1/G1 Green Lead Free Green AZ386M-E1 AZ386M-G1 386M-E1 386M-G1 Tube AZ386MTR-E1 AZ386MTR-G1 386M-E1 386M-G1 Tape & Reel AZ386P-E1 AZ386P-G1 AZ386P-E1 AZ386P-G1 0 to +70oC 0 to +70oC AZ386 Document number: DS43294 Rev. 1 - 3 6 of 10 www.diodes.com Tube November 2020 © Diodes Incorporated AZ386 Package Outline Dimensions (All dimensions in mm(inch).) Please see http://www.diodes.com/package-outlines.html for the latest version. (1) Package Type: SOIC-8 4.700(0.185) 5.100(0. 201) 7° ~ 9° 0.320(0. 013) TYP 1.350(0. 053) 1.750(0. 069) 8° 8° ~ 9° 7° 0.600(0. 024) 0.725(0. 029) D 5.800(0. 228) 6.200(0. 244) 1.270(0. 050) TYP D 20:1 0.300(0. 012) R0.150(0.006) 0.100(0. 004) 1.000(0. 039) TYP 3.800(0. 150) Option 1 4.000(0. 157) 0.300(0. 012) 0.150(0. 006) 0.250(0. 010) Option 1 0° 8° 1° 7° 0.510(0. 020) R0.150(0.006) 0.450(0. 017) 0.820(0. 032) Option 2 0.350(0. 014) TYP Note: Eject hole , oriented hole and mold mark is optional . AZ386 Document number: DS43294 Rev. 1 - 3 7 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Package Outline Dimensions (All dimensions in mm(inch).) (continued) Please see http://www.diodes.com/package-outlines.html for the latest version. (2) Package Type: DIP-8 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. AZ386 Document number: DS43294 Rev. 1 - 3 8 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. (1) Package Type: SOIC-8 Grid placement courtyard G Z Y E X Dimensions Z (mm)/(inch) G (mm)/(inch) X (mm)/(inch) Y (mm)/(inch) E (mm)/(inch) Value 6.900/0.272 3.900/0.154 0.650/0.026 1.500/0.059 1.270/0.050 AZ386 Document number: DS43294 Rev. 1 - 3 9 of 10 www.diodes.com November 2020 © Diodes Incorporated AZ386 IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. 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Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2020 Diodes Incorporated www.diodes.com AZ386 Document number: DS43294 Rev. 1 - 3 10 of 10 www.diodes.com November 2020 © Diodes Incorporated