AZ4558

Data Sheet DUAL OPERATIONAL AMPLIFIERS General Description The AZ4558 consists of two high performance operational amplifiers. The IC features high gain, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. It can work with ±18V maximum power supply voltage. The AZ4558 is specifically suitable for applications in differential-in, differential-out as well as in potentialmetric amplifiers and where gain and phase matched channels are mandatory. The AZ4558 is available in DIP-8 and SOIC-8 package. AZ4558 Features · · · · · · Internal Frequency Compensation Large Signal Voltage Gain with 100 dB Typical High Input Resistance with 5MΩ Typical Maximum Power Supply Voltages: ±18V Compatible with NJM 4558 Low Input Voltage Noise with 10nV/ Hz at 1KHz Applications · · Audio AC-3 Decoder System Audio Amplifier SOIC-8 DIP-8 Figure 1. Package Types of AZ4558 Jul. 2006 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Pin Configuration AZ4558 M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 INPUT 1INPUT 1+ VEE 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ Top View Figure 2. Pin Configuration of AZ4558 Functional Block Diagram 3.1 KΩ VCC 150 Ω - Input + Input 25 Ω Output 25 Ω 10pF 87 pF 7.1 KΩ 7.1 KΩ 480 Ω 4.2 KΩ 36 KΩ VEE Figure 3. Representative Schematic Diagram of AZ4558 (Each Amplifier) Jul. 2006 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Ordering Information AZ4558 AZ4558 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Circuit Type Package M: SOIC-8 P: DIP-8 Package Temperature Range -40 to 85oC -40 to 85oC Part Number Tin Lead AZ4558M AZ4558MTR AZ4558P Lead Free AZ4558M-E1 AZ4558MTR-E1 AZ4558P-E1 Marking ID Tin Lead 4558M 4558M AZ4558P Lead Free 4558M-E1 4558M-E1 AZ4558P-E1 Packing Type Tube Tape & Reel Tube SOIC-8 DIP-8 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Input Voltage Differential Input Voltage Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) Power Dissipation Symbol VCC VEE VI VID TJ TSTG TL DIP-8 PD SOIC-8 Value +20 -20 ±15 ±30 150 -65 to 150 260 800 500 mW V V V o o o AZ4558 Unit C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operating Temperature Range Min ±4 -40 Max ±18 85 Unit V o C Jul. 2006 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC unless otherwise specified. Parameter Input Offset Voltage Input Bias Current Input Offset Current Input Resistance Supply Current Large Signal Voltage Gain Common Mode Rejection Ratio Power Supply Rejection Ratio Source Output Current Sink RL=∞, Over full temperature VCM=0V VCM=0V Conditions AZ4558 Min Typ 0.5 25 2.5 Max 6 250 100 5.7 Unit mV nA nA MΩ mA dB dB dB mA mA V V/µS nV Hz 0.3 range RL≥2Κ, VO=±10V RS≤10kΩ RS≤10kΩ V+=1V, V-=0V, VO=2V V+=0V, V-=1V, VO=2V RL≥2KΩ RL≥10KΩ RL=2KΩ, CL=100pF RS=50Ω, f=1KHz RL=2KΩ, f=10KHz 5 3.3 85 80 80 100 92 95 50 50 ±10 ±12 ±13 ±14 1.3 10 3.4 Output Voltage Swing Slew Rate Equivalent Input Noise Voltage Density Gain Bandwidth Product MHz Jul. 2006 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics 120 30 AZ4558 Open Loop Voltage Gain (dB) RL=2KΩ, TA=25 C 80 o Maximum Voltage Swing (V) 100 VCC=15V, VEE=-15V 25 20 VCC=15V, VEE=-15V, RL=2K, TA=25 C o 60 15 40 10 20 5 0 0 2x10 0 10 1 10 2 10 3 10 4 10 5 10 6 10 1 10 2 10 3 10 4 10 5 10 6 Frequency (HZ) Frequency (HZ) Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency 30 28 10 3 VCC=15V, VEE=-15V, TA=25 C o Equivalent Input Noise Voltage Density 0.5 (nV/(HZ) ) Maximum Voltage Swing (V) 26 24 22 20 18 16 14 12 VCC=15V, VEE=-15V 10 2 RS=50Ω, TA=25 C o 10 1 10 0 0.1K 1K 10K 10 0 10 1 10 2 10 3 Load Resistance (Ω) Frequency (HZ) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Equivalent Input Noise Voltage Density vs. Frequency Jul. 2006 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) 1.2 1.1 1.0 80 AZ4558 VCC=15V VEE=-15V Input Bias Current (nA) 70 60 50 40 30 20 10 0 -25 0 25 50 VCC=15V VEE=-15V Input Offset Voltage (mV) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -25 0 25 50 o 75 100 125 75 o 100 125 Ambient Temperature ( C) Ambient Temperature ( C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Typical Application VO 10µF 6.2K 20K 8 7 + AZ4558 + 1 D2 15K 2 3 4 6 5 20K 20K 20K D1 10K VIN Figure 10. Application of AZ4558 in an AC/DC Converter Jul. 2006 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AZ4558 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 6° 5° 3.710(0.146) 4.310(0.170) 4° 3.200(0.126) 3.600(0.142) 4° 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Jul. 2006 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AZ4558 4.800(0.189) 5.000(0.197) 7° 1.350(0.053) 1.750(0.069) 0.320(0.013) 8° 7° 8° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) φ 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0° 8° 0.330(0.013) 0.510(0.020) 0.900(0.035) 1° 5° R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386