BCW61DTA

SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Base - Emitter Voltage VBE -0.55 -0.65 -0.72 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V VEBO -5 V -0.75 V V V Emitter-Base Voltage -0.6 Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 °C BCW61C BCW61D -32 V ICEO=-2mA -5 V IEBO=-1µA BCW60 Collector-Emitter Breakdown Voltage BCW61B CONDITIONS. COMPLEMENTARY TYPE – MIN. hFE UNIT – CA – CB – CC – CD SYMBOL BCW61A 120 60 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 Transition Frequency fT 180 Emitter-Base Capacitance Cebo 11 Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 2 35 50 85 400 80 480 MAX. BCW61AR BCW61BR BCW61CR BCW61DR PARAMETER Static Forward Current Transfer Ratio TYP. ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – BCW61A – BA BCW61B – BB BCW61C – BC BCW61D – BD BCW61 220 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 310 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V MHz IC =10mA, VCE = -5V f = 100MHz pF VEBO= -0.5V,f =1MHz 6 pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2KΩ, f=1KHz ∆f=200Hz 150 800 ns ns ns ns ns ns -IC : -IB1 : IB2 =10:1:1mA R1=R2=5KΩ VBB =-3.6V, RL=990Ω E C B ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT Operating and Storage Temperature Range Tj:Tstg FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE GroupC hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 +VBB R2 60 50 kΩ 10-4 100 µS VCC(-10V) RL 1µsec R1 -10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω BAY 63 tr < 5nsec Zin ≥ 100kΩ Oscilloscope *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device PAGE NO S W SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.25 -0.25 -0.55 V V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA PARAMETER SYMBOL VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.60 -0.68 -0.70 -0.80 -0.85 -1.05 V V IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Base - Emitter Voltage VBE -0.55 -0.65 -0.72 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V VEBO -5 V -0.75 V V V Emitter-Base Voltage -0.6 Continuous Collector Current IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 °C BCW61C BCW61D -32 V ICEO=-2mA -5 V IEBO=-1µA BCW60 Collector-Emitter Breakdown Voltage BCW61B CONDITIONS. COMPLEMENTARY TYPE – MIN. hFE UNIT – CA – CB – CC – CD SYMBOL BCW61A 120 60 140 170 30 180 80 200 250 40 250 100 270 350 100 380 110 340 500 Transition Frequency fT 180 Emitter-Base Capacitance Cebo 11 Collector-Base Capacitance Ccbo Noise Figure N Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 2 35 50 85 400 80 480 MAX. BCW61AR BCW61BR BCW61CR BCW61DR PARAMETER Static Forward Current Transfer Ratio TYP. ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – BCW61A – BA BCW61B – BB BCW61C – BC BCW61D – BD BCW61 220 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 310 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 460 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V 630 IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V MHz IC =10mA, VCE = -5V f = 100MHz pF VEBO= -0.5V,f =1MHz 6 pF VCBO = -10V, f =1MHz 6 dB IC =- 0.2mA, VCE =- 5V RG=2KΩ, f=1KHz ∆f=200Hz 150 800 ns ns ns ns ns ns -IC : -IB1 : IB2 =10:1:1mA R1=R2=5KΩ VBB =-3.6V, RL=990Ω E C B ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT Operating and Storage Temperature Range Tj:Tstg FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A h11e hFE Group B hFE GroupC hFE Group D Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 2 2 3 h21e 200 260 330 520 h22e 18 30 24 50 30 +VBB R2 60 50 kΩ 10-4 100 µS VCC(-10V) RL 1µsec R1 -10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω BAY 63 tr < 5nsec Zin ≥ 100kΩ Oscilloscope *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device PAGE NO S W