BCW68HTC

BCW67 BCW68 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current ICES Collector-Emitter Breakdown Voltage BCW67 V Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage -0.7 hFE 75 100 35 BCW67B BCW68G hFE 120 160 60 BCW67C BCW68H hFE 180 250 100 Transition Frequency fT 100 Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff V IEBO =-10µA B COMPLEMENTARY TYPES – BCW67 – BCW65 BCW68 – BCW66 SOT23 -20 -10 nA µA VCES =-45V VCES=-45V , Tamb=150°C PARAMETER SYMBOL BCW67 BCW68 UNIT Collector-Emitter Voltage -45 -60 V -20 nA VEBO =-4V VCES Collector-Emitter Voltage VCEO -32 -45 V -0.3 V V IC=-100mA, IB = -10mA IC= -500mA, IB =-50mA* Emitter-Base Voltage VEBO -5 V Peak Pulse Current(10ms) ICM -1000 mA V IC=-500mA, IB=-50mA* Continuous Collector Current IC -800 mA Base Current IB -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 250 400 350 630 IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* MHz IC =-20mA, VCE =-10V f = 100MHz 18 pF VCBO =-10V, f =1MHz 80 pF VEBO=-0.5V, f =1MHz 10 dB IC= -0.2mA, VCE =- 5V RG =1KΩ, f=1KH ∆f=200Hz 100 400 ns ns IC=-150mA IB1=- IB2 =-15mA RL=150Ω ABSOLUTE MAXIMUM RATINGS. Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 30 E C VCES =-32V VCES=-32V ,Tamb=150°C IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* 2 4W 5W 6W 7T 5T 7N nA IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* 12 BCW67AR – BCW67BR – BCW67CR – BCW68FR – BCW68GR – BCW68HR – µA 250 170 ISSUE 4 - JUNE 1996 PARTMARKING DETAILS – BCW67A – DA BCW67B – DB BCW67C – DC BCW68F – DF BCW68G – DG BCW68H – DH -20 -10 -2 VBE(sat) BCW67A BCW68F ICEO=-10mA ICEO=-10mA IC=-10µA IC=-10µA BCW68 Static Forward Current Transfer BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 3 - 29 BCW67 BCW68 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current ICES Collector-Emitter Breakdown Voltage BCW67 V Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage -0.7 hFE 75 100 35 BCW67B BCW68G hFE 120 160 60 BCW67C BCW68H hFE 180 250 100 Transition Frequency fT 100 Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff V IEBO =-10µA B COMPLEMENTARY TYPES – BCW67 – BCW65 BCW68 – BCW66 SOT23 -20 -10 nA µA VCES =-45V VCES=-45V , Tamb=150°C PARAMETER SYMBOL BCW67 BCW68 UNIT Collector-Emitter Voltage -45 -60 V -20 nA VEBO =-4V VCES Collector-Emitter Voltage VCEO -32 -45 V -0.3 V V IC=-100mA, IB = -10mA IC= -500mA, IB =-50mA* Emitter-Base Voltage VEBO -5 V Peak Pulse Current(10ms) ICM -1000 mA V IC=-500mA, IB=-50mA* Continuous Collector Current IC -800 mA Base Current IB -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 250 400 350 630 IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* MHz IC =-20mA, VCE =-10V f = 100MHz 18 pF VCBO =-10V, f =1MHz 80 pF VEBO=-0.5V, f =1MHz 10 dB IC= -0.2mA, VCE =- 5V RG =1KΩ, f=1KH ∆f=200Hz 100 400 ns ns IC=-150mA IB1=- IB2 =-15mA RL=150Ω ABSOLUTE MAXIMUM RATINGS. Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 30 E C VCES =-32V VCES=-32V ,Tamb=150°C IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* 2 4W 5W 6W 7T 5T 7N nA IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* 12 BCW67AR – BCW67BR – BCW67CR – BCW68FR – BCW68GR – BCW68HR – µA 250 170 ISSUE 4 - JUNE 1996 PARTMARKING DETAILS – BCW67A – DA BCW67B – DB BCW67C – DC BCW68F – DF BCW68G – DG BCW68H – DH -20 -10 -2 VBE(sat) BCW67A BCW68F ICEO=-10mA ICEO=-10mA IC=-10µA IC=-10µA BCW68 Static Forward Current Transfer BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 3 - 29