BCX17TA

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX17 ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX17 BCX17R COMPLIMENTARY TYPES - – T1 – T4 E C BCX19 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V CES -50 V Collector-Emitter Voltage (I C =-10mA) V CEO -45 V Emitter-Base Voltage V EBO -5 V Collector Current IC -500 mA Peak Collector Current I CM -1000 mA Peak Emitter Current I EM -1000 mA Base Current IB -100 mA Peak Base Current I BM -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MAX. UNIT CONDITIONS. Collector-Base Cut-Off Current I CBO MIN. TYP. -100 -200 nA µA I E =0, V CB =-20V I E =0, V CB =-20V, T j=150°C Emitter-Base Cut-Off Current I EBO -10 µA I C =0, V EB =-1V Base-Emitter Voltage V BE -1.2 V I C =-500mA, V CE =-1V* Collector-Emitter Saturation Voltage V CE(sat) -620 mV I C =-500mA, I B =-50mA* Static Forward Current Transfer Ratio h FE Transition Frequency fT 100 MHz I C =-10mA, V CE =-5V f =35MHz Output Capacitance C obo 8.0 pF V CB =-10V, f =1MHz 100 70 40 I C =-10 0 mA, V CE =-1V I C =-300mA, V CE =-1V* I C =-500mA, V CE =-1V* 600 *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA