BCX19TC

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX19 BCX19R - COMPLEMENTARY TYPES - BCX19 U1 U4 E C BCX17 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V CES 50 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 1000 mA Continuous Collector Current IC 500 mA Base Current IB 100 mA Peak Base Current I BM 200 mA Power Dissipation at T amb=25°C P TOT 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Cut-Off Current MIN. TYP. MAX. UNIT CONDITIONS. I CBO 100 200 nA µA V CB =20V V CB =20V, T j=150°C Emitter-Base Cut-Off Current I EBO 10 µA V EB =5V Base-Emitter Voltage V BE 1.2 V I C =500mA, V CE =1V* Collector-Emitter Saturation Voltage V CE(sat) 620 mV I C =500mA, I B =50mA* Static Forward Current Transfer Ratio h FE Transition Frequency fT 200 MHz I C =10mA, V CE =5V f =35MHz Output Capacitance C obo 5.0 pF V CB =10V, f =1MHz 100 70 40 I C =10 0 mA, V CE =1V I C =300mA, V CE =1V* I C =500mA, V CE =1V* 600 *Measured under pulsed conditions. TBA