BFQ31ATA

SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR BFQ31A ISSUE 4 – MARCH 2001 PARTMARKING DETAILS BFQ31A – S4 BFQ31AR – S5 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 3 V Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL BFQ31A MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V (BR)CBO 30 V I C=1.0 µ A, I E =0 Collector-Emitter Breakdown Voltage V (BR)CEO 15 V I C=3mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO 3 V I E=10 µ A, I C=0 Collector Cut-Off Current I CBO 0.01 µA V CB=15V, I E=0 Collector-Emitter Saturation Voltage V CE(sat) 0.4 V I C=10mA, I B=1mA Base-Emitter Saturation Voltage V BE(sat) 1.0 V I C=10mA, I B=1mA Static Forward Current Transfer Ratio h FE 100 Transition Frequency fT 600 I C=3mA, V CE=1V MHz I C=4mA, V CE=10V f=100MHz V CB=10V, f=1MHz Output Capacitance C obo 1.7 pF Input Capacitance C ibo 2.0 pF V CB=0.5V, f=1MHz Noise Figure N 6.0 dB I C=1mA, V CE=6V R s=400 Ω , f=60MHz *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA