BS170P

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C ID 270 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ±20 V Power Dissipation at T amb =25°C P tot 625 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate Body Leakage Zero Gate Voltage Drain Current TYP. UNIT CONDITIONS. V I D=100µA, V GS=0V 3 V I D=1mA, V DS=V GS I GSS 10 nA VGS=15V, V DS=0V I DSS 0.5 µA V GS=0V, V DS=25V 5 Ω V GS=10V, I D=200mA Static Drain-Source R DS(on) on-State Resistance (1) MAX. Forward g fs Transconductance (1)(2) 200 mS V DS=10V, I D=200mA Input Capacitance (2) C iss 60 pF V GS=0V, V DS=10V f=1MHz Turn-On Time (2)(3) t (on) 10 ns V DD≈15V, I D=600mA Turn-Off Time (2)(3) t (off) 10 ns (1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test (3) Switching times measured with a 50Ω source impedance and