BS250FTA

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL – MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current ID -90 mA IDM -1.6 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -45 Gate-Source Threshold Voltage VGS(th) -1 Gate-Body Leakage -70 V ID=-100µ A, VGS=0V -3.5 V ID =-1mA, VDS= VGS IGSS -20 nA VGS=-15V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5. µ A VDS=-25V, VGS=0V Static Drain-Source On-State Resistance (1) RDS(on) 9 14 Ω VGS=-10V,ID=-200mA Forward Transconductance (1)(2) gfs 90 mS VDS=-10V,ID=-200mA Input Capacitance (2) Ciss 25 pF VDS=-10V, VGS=0V, f=1MHz Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr 10 ns Turn-Off Delay Time (2)(3) td(off) 10 ns Fall Time (2)(3) tf 10 ns VDD ≈ -25V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and