BS250P

BS250P P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Features and Benefits     VDS = 45V RDS(ON) = 14 For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ REFER TO ZVP2106A FOR GRAPHS Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Value -45 -230 -3 20 700 -55 to +150 VDS ID IDM VGS Continuous Drain Current at TA = +25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at TA = +25°C Operating and Storage Temperature Range PTOT TJ, TSTG Unit V mA A V mW °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol BVDSS VGS(TH) IGSS IDSS Min -45 -1 — — Static Drain-Source On-State Resistance (Note 1) Typ — — — — Max — -3.5 -20 -500 Unit V V nA nA Test Condition ID = -100A, VGS = 0V ID = -1mA, VDS = VGS VGS = -15V, VDS = 0V VGS = 0V, VDS = -25V RDS(ON) — — 14 Ω VGS = -10V, ID = -200mA Forward Transconductance (Note 1) (Note 2) gfs — 150 — ms Input Capacitance (Note 2) Ciss — 60 — pF VDS = -10V, ID = -200mA VGS = 0V, VDS = -10V, f = 1.0MHz t(ON) t(OFF) — — — — 20 20 ns ns Turn-On Time (Note 2) (Note 3) Turn-Off Time (Note 2) (Note 3) Notes: VDD  -25V, ID = -500mA 1. Measured under pulsed conditions. Pulse Width = 300s. Duty cycle 2%. 2. Sample test. 3. Switching times measured with a 50source impedance and