BS250P
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Features and Benefits
VDS = 45V
RDS(ON) = 14
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
REFER TO ZVP2106A FOR GRAPHS
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
Value
-45
-230
-3
20
700
-55 to +150
VDS
ID
IDM
VGS
Continuous Drain Current at TA = +25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at TA = +25°C
Operating and Storage Temperature Range
PTOT
TJ, TSTG
Unit
V
mA
A
V
mW
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Symbol
BVDSS
VGS(TH)
IGSS
IDSS
Min
-45
-1
—
—
Static Drain-Source On-State Resistance (Note 1)
Typ
—
—
—
—
Max
—
-3.5
-20
-500
Unit
V
V
nA
nA
Test Condition
ID = -100A, VGS = 0V
ID = -1mA, VDS = VGS
VGS = -15V, VDS = 0V
VGS = 0V, VDS = -25V
RDS(ON)
—
—
14
Ω
VGS = -10V, ID = -200mA
Forward Transconductance (Note 1) (Note 2)
gfs
—
150
—
ms
Input Capacitance (Note 2)
Ciss
—
60
—
pF
VDS = -10V, ID = -200mA
VGS = 0V, VDS = -10V,
f = 1.0MHz
t(ON)
t(OFF)
—
—
—
—
20
20
ns
ns
Turn-On Time (Note 2) (Note 3)
Turn-Off Time (Note 2) (Note 3)
Notes:
VDD -25V, ID = -500mA
1. Measured under pulsed conditions. Pulse Width = 300s. Duty cycle 2%.
2. Sample test.
3. Switching times measured with a 50source impedance and
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