BSP19TA

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP19 ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO – 350V * Low saturation voltage C COMPLEMENTARY TYPE – BSP16 PARTMARKING DETAIL – BSP19 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 A 0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 350 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 20 nA VCB=300V Emitter Cut-Off Current IEBO 0.1 µA VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=50mA, IB=4mA* Base-Emitter Saturation Voltage VBE(sat) 1.3 V IC=50mA, IB=4mA* Static Forward Current hFE Transfer Ratio 40 50 Transition Frequency fT 70 Output Capacitance Cobo TYP. MAX. IC=20mA, VCE=5V* IC=100mA, VCE=5V* 10 MHz IC=10mA, VCE=10V f = 20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical characteristics graphs see FZT658 datasheet. 3 - 60