BSP75N

BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current(a) 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. S S D IN Features Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. • Short circuit protection with auto restart • Over-voltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) • Logic level input Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12mm embossed 1000 BSP75NTA Device marking BSP75N Issue 4 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BSP75N Functional block diagram D Over voltage protection dV/dt limitation IN Human body ESD protection Over current protection Logic Over temperature protection S Applications • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • ␮C compatible power switch for 12V and 24V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low VDS. Issue 4 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BSP75N Absolute maximum ratings Parameter Symbol Limit Unit Continuous drain-source voltage VDS 60 V Drain-source voltage for short circuit protection VIN = 5V VDS(SC) 36 V Drain-source voltage for short circuit protection VIN = 10V VDS(SC) 20 V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range T j, -40 to +150 °C Storage temperature range Tstg -55 to +150 °C Power dissipation at TA =25°C (a) PD 1.5 W Power dissipation at TA =25°C (c) PD 0.6 W Continuous drain current @ VIN=10V; TA=25°C (a) ID 1.3 A Continuous drain current @ VIN=5V; TA=25°C (a) ID 1.1 A Continuous drain current @ VIN=5V; TA=25°C (c) ID 0.7 A Continuous source current (body diode) (a) IS 2.0 A Pulsed source current (body diode) (b) IS 3.3 A Unclamped single pulse inductive energy EAS 550 mJ Load dump protection VLoadDump 80 V Electrostatic discharge (human body model) VESD 4000 V DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Limit Unit Junction to ambient (a) R⍜JA 83 °C/W Junction to ambient (b) R⍜JA 45 °C/W Junction to ambient (c) R⍜JA 208 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t5V VIN=+10V, VDS>5V 1 Current limit (†) ID(LIM) 0.7 1.0 1.5 A Current limit(†) Dynamic characteristics Turn-on time (VIN to 90% ID) ID(LIM) 1.0 1.8 2.3 A ton 3.0 10 ␮s Turn-off time (VIN to 90% ID) toff 13 20 ␮s Slew rate on (70 to 50% VDD) -dVDS/dton 8 20 V/␮s Slew rate off (50 to 70% VDD) DVDS/dtoff 3.2 10 V/␮s Protection functions (‡) Required input voltage for over temperature protection VPROT 4.5 TJT 150 EAS Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C Unclamped single pulse inductive energy Tj=150°C Inverse diode Source drain voltage RL=22⍀, VDD=12V, VIN=0 to +10V RL=22⍀, VDD=12V, VIN=+10V to 0V RL=22⍀, VDD=12V, VIN=0 to +10V RL=22⍀, VDD=12V, VIN=+10V to 0V V 175 °C 1 550 °C mJ 200 mJ VSD Conditions 1 V ID(ISO)=0.7A, VDD=32V ID(ISO)=0.7A, VDD=32V VIN=0V, -ID=1.4A NOTES: (*) The drain current is limited to a reduced value when VDS exceeds a safe level. (†) Protection features may operate outside spec for VIN