BSS123-7-F

BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits BVDSS RDS(ON) ID TA = +25°C 100V 6.0Ω @ VGS = 10V 0.17A Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as:    Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications      Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating     Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data   Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate)     D SOT23 D G G S Top View S Top View Equivalent Circuit Ordering Information (Note 5) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case SOT23 SOT23 SOT23 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain