BSS138TC

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA Pulsed Drain Current IDM 800 mA Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 360 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 50 Gate-Source Threshold Voltage VGS(th) 0.5 Gate-Body Leakage MIN. MAX. UNIT CONDITIONS. V ID=0.25mA, VGS=0V 1.5 V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 0.5 5 100 µA µA nA VDS=50V, VGS=0 VDS=50V, VGS=0V, T=125°C(2) VDS=20V, VGS=0 Static Drain-Source On-State Resistance (1) RDS(on) 3.5 Ω VGS=5V,ID=200mA Forward Transconductance(1)(2) gfs mS VDS=25V,ID=200mA Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr 10 ns Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 25 ns 120 VDS=25V, VGS=0V, f=1MHz VDD ≈30V, ID=280mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and