DDC144TU-7

DDC144TU DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR Please click here to visit our online spice models database. General Description NEW PRODUCT • DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device. Fig. 1: SOT-363 Features • • • • Built in Base Resistors Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) BQ2 CQ1 Mechanical Data • • • • • • • • EQ2 47k R2 DDC144T_DIE Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 5 Ordering Information: See Page 5 Weight: 0.015 grams (approximate) Q2 DDC144T_DIE Q1 R1 47k BQ1 EQ1 CQ2 Fig. 2: Schematic and Pin Configuration Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) Figure DDTC144T_DIE Q1 NPN 47KΩ ⎯ 2 DDTC144T_DIE Q2 NPN ⎯ 47KΩ 2 Maximum Ratings: Total Device @TA = 25°C unless otherwise specified Characteristic Power Dissipation Symbol Value Unit Pd 200 mW Power Deration above 25°C Pder 1.6 mW / °C Output Current Iout 100 mA Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, junction to ambient (packaged device) (Ref: equivalent to only one heated junction) @ TA = 25°C Notes: Symbol Value Unit TJ, TSTG -55 to +150 °C RθJA 625 °C/W 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf. DS30767 Rev. 7 - 2 1 of 6 www.diodes.com DDC144TU © Diodes Incorporated Maximum Ratings: Sub-Component Device: Discrete NPN Transistor (Q1, Q2) NEW PRODUCT Characteristic Collector-Base Voltage @TA = 25°C unless otherwise specified Symbol VCBO Value 50 Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current (dc) IC(max) 50 mA Electrical Characteristics Unit V @TA = 25°C unless otherwise specified Characteristic Off Characteristics Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Symbol Min Typ Max Unit ICBO ⎯ ⎯ 100 nA VCB = 50V, IE = 0 ICEO ⎯ ⎯ 500 nA VCE = 50V, IB = 0 IEBO ⎯ 500 nA VEB = 5V, IC = 0 ⎯ ⎯ V IC = 50uA, IE = 0 IC = 1 mA, IB = 0 Collector-Base Breakdown Voltage V(BR)CBO ⎯ 50 Collector-Emitter Breakdown Voltage Test Condition V(BR)CEO 50 ⎯ ⎯ V Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ V IE = 50uA, IC = 0 Output Voltage (Transistor is off) VOH 4.6 ⎯ 4.45 V VCC = 5V, VB = 0.05V, RL = 1KΩ VI(OFF) ⎯ 0.6 ⎯ 0.4 ⎯ 850 ⎯ nA VCE = 5V, IC = 100uA IO(OFF) ⎯ ⎯ 0.03 0.1 V IC = 2.5 mA, IB = 0.25 mA ⎯ 0.075 0.1 V IC = 10mA, IB = 0.5mA ⎯ 0.05 0.1 V IC = 10mA, IB = 1mA ⎯ 150 0.2 0.3 V IC = 50mA, IB= 5mA 400 ⎯ ⎯ VCE = 5V, IC = 1 mA 150 400 ⎯ ⎯ VCE = 5V, IC = 10 mA 150 350 ⎯ ⎯ VCE = 5V, IC = 25 mA 150 300 ⎯ ⎯ VCE = 5V, IC = 50 mA 50 110 ⎯ Vdc VCE = 5V, IC = 100 mA VCC = 5V, VB = 2.5V, RL=10KΩ VI(ON) ⎯ 1.5 ⎯ 0.25 0.95 Vdc VO= 0.3V, IC= 2mA Ii ⎯ 19.2 ⎯ 28 mA VI = 5V Base-Emitter Turn-on Voltage VBE(ON) ⎯ ⎯ 1.2 V VCE = 5V, IC = 2mA Base-Emitter Saturation Voltage Input Resistor +/- 30% (Base) Small Signal Characteristics Transition Frequency (gain-bandwidth product) VBE(SAT) R1 ⎯ ⎯ ⎯ 47 1.6 ⎯ V KΩ IC = 200uA, IB = 20uA ⎯ fT ⎯ 250 VCE = 10V, IE = 5mA, f =100MHz ⎯ ⎯ ⎯ 5 MHz CC pF VCB = 10V, IE = 0, f = 1MHz Input Voltage (load is off) Output Current (leakage same as ICEO) On Characteristics* Collector-Emitter Saturation Voltage DC Current Gain Output Voltage (equivalent to VCE(SAT) or VO(on)) Input Voltage Input Current Collector Capacitance, (Ccbo-Output Capacitance) VCE(SAT) hFE VOL 0.2 VCC = 50V, VI = 0V *Pulse Test: Pulse width, tp