DGD21904S14-13

DGD21904S14-13

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOIC14

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14SO

  • 详情介绍
  • 数据手册
  • 价格&库存
DGD21904S14-13 数据手册
NOT RECOMMENDED FOR NEW DESIGN USE DGD21904M DGD21904 HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14 Description Features The DGD21904 is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD21904’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.   The DGD21904 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD21904 is available in SO-14 package. The operating temperature extends from -40°C to +125°C. Applications               DC-DC Converters DC-AC Inverters AC-DC Power Supplies Motor Controls Class D Power Amplifiers Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuation Output Drivers Capable of 4.5A/4.5A Typ Sink/Source Logic Input (HIN and LIN) 3.3V Capability Schmitt Triggered Logic Inputs with Internal Pull Down Undervoltage Lockout for High and Low-Side Drivers Extended Temperature Range: -40°C to +125°C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data      Case: SO-14 (Type TH) Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.142 grams (Approximate) SO-14 Typical Configuration Top View Ordering Information (Note 4) Part Number DGD21904S14-13 Notes: Marking DGD21904 Reel Size (inches) 13 Tape Width (mm) 16 Quantity Per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain
DGD21904S14-13
物料型号:DGD21904M

器件简介: DGD21904是一款高电压/高速栅极驱动器,能够驱动半桥配置中的N沟道MOSFET和IGBT。它采用高电压处理技术,能够在高dV/dt条件下通过自举操作将高侧开关切换至600V。

引脚分配: - HIN:高侧栅极驱动器输出的逻辑输入,与HO同步 - LIN:低侧栅极驱动器输出的逻辑输入,与LO同步 - Vss:逻辑地 - NC:无连接引脚 - COM:低侧和逻辑返回 - LO:低侧栅极驱动输出 - Vcc:低侧和逻辑固定电源 - Vs:高侧浮动电源返回 - HO:高侧栅极驱动输出 - VB:高侧浮动电源

参数特性: - 浮动高侧驱动在自举操作中可达到600V - 驱动两个N沟道MOSFET或IGBT在半桥配置中 - 输出驱动器典型值为4.5A/4.5A,可吸收/提供电流 - 逻辑输入(HIN和LIN)兼容3.3V标准TTL和CMOS电平 - 施密特触发器逻辑输入,内部下拉 - 高侧和低侧驱动器的欠压锁定 - 扩展温度范围:-40°C至+125°C - 完全无铅且完全符合RoHS标准

功能详解: DGD21904具有高脉冲电流缓冲器设计,以最小化驱动器交叉导通。它还具有内部下拉的施密特触发器逻辑输入和欠压锁定功能,以确保高侧和低侧驱动器的稳定运行。

应用信息: 适用于DC-DC转换器、DC-AC逆变器、AC-DC电源、电机控制、Class D功率放大器等。

封装信息: DGD21904采用SO-14封装,重量约为0.142克。封装材料为模塑塑料,符合UL 94V-0易燃性分类评级,湿度敏感度等级为J-STD-020标准的3级。
DGD21904S14-13 价格&库存

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