DMC3028LSD

A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS(on) V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A 45mΩ @ VGS= 4.5V 5.6A 25mΩ @ VGS= -10V -7.4A 41mΩ @ VGS= -4.5V -5.7A • Low on-resistance • Fast switching speed • “Green” Component and RoHS Compliant (Note 1) 30V Q2 Mechanical Data -30V Description and Applications This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. • Motor control • Backlighting • DC-DC Converters • Power management functions Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) S1 D1 G1 D1 S2 D2 G2 D2 TOP VIEW Ordering Information • D1 G2 G1 S1 Q1 N-Channel Top view D2 S2 Q2 P-Channel (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC3028LSD-13 C3028LD 13 12 2,500 Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website Marking Information C3028LD YY WW DMC3028LSD Document Revision: 4 = Manufacturer’s Marking C3028LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Maximum Ratings @TA = 25°C unless otherwise specified Symbol N-Channel - Q1 P-Channel - Q2 Drain-Source Voltage Characteristic VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V (Notes 3 & 5) 7.1 -7.4 TA = 70°C (Notes 3 & 5) 5.7 -5.9 5.5 6.6 -5.8 -6.8 Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V ID (Notes 2 & 5) (Notes 2 & 6) Units A (Notes 4 & 5) IDM 34 -36 A Continuous Source Current (Body diode) (Notes 3 & 5) IS 3.5 -3.5 A Pulsed Source Current (Body diode) (Notes 4 & 5) ISM 34 -36 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Power Dissipation Linear Derating Factor (Notes 2 & 5) PD 1.3 10 Power Dissipation Linear Derating Factor (Notes 2 & 6) PD 1.8 14 Power Dissipation Linear Derating Factor (Notes 3 & 5) PD 2.1 17 Thermal Resistance, Junction to Ambient (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) RθJA 100 70 60 Thermal Resistance, Junction to Lead (Notes 5 & 7) Operating and Storage Temperature Range Notes: RθJL TJ, TSTG 51 °C/W 46 -55 to +150 Unit W mW/°C W mW/°C W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC3028LSD Document Revision: 4 2 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD RDS(ON) -ID Drain Current (A) ID Drain Current (A) RDS(ON) 10 Limited DC 1 1s 100ms 100m 10m 1ms 100us 1s 100ms 1 1ms 100us Single Pulse, T amb=25°C 0.1 10 10ms Notes 2 & 5 10m Single Pulse, T amb=25°C 0.1 DC 1 100m 10ms Notes 2 & 5 10 Limited VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 100 1.5 Two active die One active die 1.0 0.5 0.0 0 Pulse Width (s) 50 75 100 125 150 Temperature (°C) Transient Thermal Impedance Maximum Power (W) 25 Derating Curve Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC3028LSD Document Revision: 4 3 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Electrical Characteristics – Q1 N-Channel Characteristic OFF CHARACTERISTICS @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS RDS (ON) ⎯ ⎯ ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) 0.028 0.045 Ω VGS= 10V, ID= 6.0A VGS= 4.5V, ID= 4.9A gfs ⎯ 12 ⎯ S VDS= 15V, ID= 6.0A Diode Forward Voltage (Note 8) VSD ⎯ 0.68 1.2 V IS= 1.7A, VGS= 0V Reverse recovery time (Note 9) trr 11.5 ⎯ ns Reverse recovery charge (Note 9) Qrr ⎯ 4.4 ⎯ nC Input Capacitance Ciss ⎯ 472 ⎯ pF Output Capacitance Coss ⎯ 178 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 65 ⎯ pF Total Gate Charge Qg ⎯ 5.2 ⎯ nC Total Gate Charge Qg ⎯ 10.5 ⎯ nC Gate-Source Charge Qgs ⎯ 1.86 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.3 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 2.5 ⎯ ns Turn-On Rise Time (Note 10) tr ⎯ 3.1 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 14 ⎯ ns tf ⎯ 9.7 ⎯ ns Forward Transconductance (Notes 8 & 9) IS= 1.7A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Fall Time (Note 10) Notes: VDS= 15V, VGS= 0V f= 1MHz VDS= 15V, VGS= 4.5V ID= 6A VDS= 15V, VGS= 10V ID= 6A VDD= 15V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. DMC3028LSD Document Revision: 4 4 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Q1 N-Channel 5V T = 150°C 4.5V 4V ID Drain Current (A) 3.5V 1 3V 0.1 2.5V VGS T = 25°C 10V 4.5V 4V 10 ID Drain Current (A) 10V 10 3.5V 3V 1 2.5V 0.1 2V VGS 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) DMC3028LSD Document Revision: 4 1000 ID = 6A RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 10 2.5V VGS T = 25°C 100 3V 10 3.5V 4V 1 4.5V 0.1 10V 0.01 0.01 VGS = 10V 1.4 Normalised Curves v Temperature 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Q1 N-Channel continued VGS = 0V C Capacitance (pF) 600 f = 1MHz 500 400 CISS COSS 300 200 100 CRSS 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 700 10 9 8 7 6 5 4 3 2 1 0 ID = 6A VDS = 15V 0 1 2 3 4 5 6 7 Q - Charge (nC) 8 9 10 11 Gate-Source Voltage v Gate Charge Test Circuits – Q1 N-Channel Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMC3028LSD Document Revision: 4 Switching time test circuit 6 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Electrical Characteristics – Q2 P-Channel Characteristic OFF CHARACTERISTICS @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) -1.0 ⎯ -3.0 V ID= -250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage VGS= -10V, ID= -7.1A RDS (ON) ⎯ Forward Transconductance (Notes 8 & 9) gfs ⎯ 18.6 ⎯ S VDS= -15V, ID= -7.1A Diode Forward Voltage (Note 8) VSD ⎯ -0.80 -1.2 V IS= -1.7A, VGS= 0V Reverse recovery time (Note 9) trr 16.2 ⎯ ns Reverse recovery charge (Note 9) Qrr ⎯ 10 ⎯ nC Input Capacitance Ciss ⎯ 1678 ⎯ pF Output Capacitance Coss ⎯ 303 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 178 ⎯ pF Total Gate Charge Qg ⎯ 16.4 ⎯ nC Static Drain-Source On-Resistance (Note 8) ⎯ 0.025 0.041 Ω VGS= -4.5V, ID= -5.5A IS= -2.2A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 9) Total Gate Charge Qg ⎯ 31.6 ⎯ nC Gate-Source Charge Qgs ⎯ 4.3 ⎯ nC Gate-Drain Charge Qgd ⎯ 6.2 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 3.5 ⎯ ns Turn-On Rise Time (Note 10) tr ⎯ 4.9 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 44 ⎯ ns tf ⎯ 28 ⎯ ns Turn-Off Fall Time (Note 10) Notes: VDS= -15V, VGS= 0V f= 1MHz VDS= -15V, VGS= -4.5V ID= -7.1A VDS= -15V, VGS= -10V ID= -7.1A VDD= -15V, VGS= -10V ID= -1A, RG ≅ 6.0Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. DMC3028LSD Document Revision: 4 7 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Q2 P-Channel T = 150°C 3.5V 4.5V -ID Drain Current (A) -ID Drain Current (A) 10V 3V 10 2.5V 1 VGS T = 25°C 10V 3.5V 3V 10 2.5V 1 2V 0.1 VGS 0.1 0.01 0.1 1 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 1 T = 25°C 0.1 2 3 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics DMC3028LSD Document Revision: 4 10 T = 25°C VGS 2.5V 3V 1 3.5V 0.1 4V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current VGS = 10V ID = 7.1A 1.4 RDS(on) 1.2 1.0 0.8 VGS = VDS 0.6 0.4 -50 VGS(th) ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature -ISD Reverse Drain Current (A) -ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C T = 25°C 0.1 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Q2 P-Channel continued -VGS Gate-Source Voltage (V) 2500 C Capacitance (pF) VGS = 0V f = 1MHz 2000 CISS 1500 COSS 1000 CRSS 500 0 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 9 8 7 6 5 4 3 2 1 0 ID = 7.1A VDS = 15V 0 5 10 15 20 Q - Charge (nC) 25 30 35 Gate-Source Voltage v Gate Charge Test Circuits – Q2 P-Channel Current regulator QG 12V VG QGS 50k 0.2␮F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS td(off) tr t(on) tr t(on) Switching time waveforms DMC3028LSD Document Revision: 4 Pulse width ⬍ 1␮S Duty factor 0.1% td(on) Switching time test circuit 9 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD h x 45° Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMC3028LSD Document Revision: 4 10 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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