DMG1013T-7

DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(on) -20V • Low On-Resistance TA = +25°C • Low Gate Threshold Voltage • Low Input Capacitance 700mΩ @ VGS = -4.5V -460mA • Fast Switching Speed 900mΩ @ VGS = -2.5V -420mA • Low Input/Output Leakage -350mA • ESD Protected Up To 3kV • • • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability 1300mΩ @ VGS = -1.8V NEW PRODUCT ID Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, • Case: SOT523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 making it ideal for high efficiency power management applications. • DC-DC Converters • Load Switch • Power Management Functions • Terminal Connections: See Diagram • Weight: 0.002 grams (approximate) Drain SOT523 D Gate Gate Protection Diode ESD PROTECTED TO 3kV Top View S G Source Top View Equivalent Circuit Ordering Information (Note 3) Part Number DMG1013T-7 Notes: Case SOT523 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain