DMG3415UFY4Q-7

DMG3415UFY4Q P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max -16V 39mΩ @ VGS = -4.5V -2.5A 52mΩ @ VGS = -2.5V -2.1A 65mΩ @ VGS = -1.8V -1.8A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: X2-DFN2015-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Backlighting  Moisture Sensitivity: Level 1 per J-STD-020  Power Management Functions   DC-DC Converters Terminals: Finish  NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.008 grams (Approximate) S D D G G ESD PROTECTED TO 3kV Top View Bottom View Gate Protection Diode Internal Schematic (Top View) S Equivalent Circuit Ordering Information (Note 5) Part Number DMG3415UFY4Q-7 Notes: Case X2-DFN2015-3 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain