DMG4N60SJ3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS (@ TJ Max) RDS(ON) Max ID TC = +25°C • • Low On-Resistance High BVDSS Rating for Power Application 650V 2.5Ω @ VGS = 10V 3.0A • • • Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, • • making it ideal for high-efficiency power management applications. • • • • • • • Motor Control Backlighting DC-DC Converters Power Management Functions • Case: TO251 and TO251 (Type TH) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO251 and TO251 (Type TH) Top View G Bottom View D S Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMG4N60SJ3 DMG4N60SJ3 Notes: Case TO251 TO251 (Type TH) Packaging 75 pieces/Tube 75 pieces/Tube 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain