DMG5802LFX-7

DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS 24V Features         Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications   Mechanical Data      DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: W-DFN5020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.03 grams (approximate) G1 S1 S1 D1 W-DFN5020-6 D2 D1/D2 G2 G1 S1 G2 S2 S2 ESD PROTECTED TO 3kV Top View Bottom View S2 Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number DMG5802LFX-7 Notes: Case W-DFN5020-6 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain