DMG7702SFG-7

厂商：
BCDSEMI(美台)
封装：
PowerWDFN8
描述：
MOSFET N-CH 30V 12A PWRDI3333-8

数据手册：

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详情介绍
数据手册
价格&库存

DMG7702SFG-7 数据手册

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE PowerDI3333-8 Product Summary V(BR)DSS RDS(ON) Features 10mΩ @ VGS = 10V 30V  ID TA = +25°C Package 12A ® PowerDI 3333-8 15mΩ @ VGS = 4.5V 9.5A DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:  Low RDS(ON) – minimize conduction losses  Low VSD – reducing the losses due to body diode conduction  Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses  Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Description  This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product    Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications    Backlighting Power Management Functions DC-DC Converters Mechanical Data       Case: PowerDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) Drain Pin 1 S S 8 7 6 5 S G Gate D D Top View D Source D 2 3 4 Top View Pin Configuration 1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMG7702SFG-7 DMG7702SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain

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DMG7702SFG-7

物料型号为DMG7702SFG，这是一款30V N-CHANNEL ENHANCEMENT MODE MOSFET，具有集成肖特基二极管。

器件简介：DMG7702SFG采用专利工艺将MOSFET和肖特基二极管单片集成，以减少导通损耗和开关损耗，适合高效率电源管理应用。

引脚分配：文档中提供了顶视图和底视图的引脚配置，包括漏极(Drain)、栅极(Gate)和源极(Source)。

参数特性： - 漏源电压(V(BR)DSS)：30V - 导通电阻(RDS(ON))：在VGS=10V时为10mΩ，在VGS=4.5V时为15mΩ - 封装：PowerDI3333-8 - 工作电流：在VGS=10V时为12A，在VGS=4.5V时为9.5A

功能详解： - 低导通电阻和低体二极管导通电压，减少损耗 - 低栅电荷，减少开关损耗 - 小型、高热效率封装，适合高密度终端产品

应用信息：符合汽车电子AEC-Q101标准，适用于背光电源管理、DC-DC转换器等。

封装信息：采用PowerDI3333-8封装，材料为模塑塑料，“绿色”成型化合物，无铅且符合RoHS标准。

重要提示：该物料不推荐用于新设计，且没有替代部件。

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