DMHC6070LSD
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Device
V(BR)DSS
N-Channel
60V
P-Channel
-60V
Features
RDS(ON) Max
ID Max
TA = 25°C
100mΩ @ VGS = 10V
4.1A
120mΩ @ VGS = 4.5V
3.7A
170mΩ @ VGS = -10V
3.1A
250mΩ @ VGS = -4.5V
2.6A
2 x N + 2 x P Channels in a SOIC Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Applications
DC Motor Control
DC-AC Inverters
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
P2G
N2D/P2D
P1G
P1S/P2S
NEW PRODUCT
ADVANCE INFORMATION
Product Summary
SO-8
H-Bridge
N2G
N1S/N2S
N1D/P1D
N1G
Top View
Pin Configuration
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC6070LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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