DMN1003UCA6-7

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVSSS RSS(ON) Typ IS Max TA = +25°C 12V 2.5mΩ @ VGS = 3.8V 23.6A Description       This new generation MOSFET has been designed to minimize the onstate resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications    CSP with Footprint 3.54mm × 1.77mm Height = 0.21mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Battery Management Load Switch Battery Protection     Case: X3-DSN3518-6 Terminal Connections: See Diagram Below Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu. Solderable per MIL-STD-202,  Method 208 e4 Weight: 0.0026 grams (Approximate) G1 1. Source 1 2. Gate 1 3. Source 1 4. Source 2 5. Gate 2 6. Source 2 ESD PROTECTED G2 Top View S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN1003UCA6-7 Notes: Case X3-DSN3518-6 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain