DMN1019UVT
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
V(BR)DSS
RDS(ON) MAX
12V
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
ID
TA = +25°C
10.7A
9.8A
9.1A
8.0A
5.3A
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case: TSOT26
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Applications
Load Switch
DC-DC Converters
Power Management Functions
D
TSOT26
ESD PROTECTED
D 1
6 D
D 2
5
D
G 3
4
S
G
Gate Protection
Diode
Top View
Pin Configuration
Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN1019UVT-7
DMN1019UVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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