DMN1032UCB4-7

DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features VDSS RDS(on) Qg Qgd ID 12V 18mΩ 3.2nC 0.3nC 4.8A LD-MOS technology with the lowest Figure of Merit: RDS(on) = 18mΩ to minimize on-state losses  Vgs(th) = 0.8V typ. for a low turn-on potential  CSP with Footprint 1.0mm × 1.0mm Qg = 3.2nC for ultra-fast switching Typ. @ VGS = 4.5V, TA = +25°C ADVANCED INFORMATION  Description nd This 2 generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high  Height = 0.62mm for Low Profile  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability efficiency power transfer. It uses Chip-Scale Package (CSP) to Mechanical Data increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switch  Case: U-WLB1010-4  Terminal Connections: See Diagram Below U-WLB1010-4 Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN1032UCB4-7 Notes: Case U-WLB1010-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain