DMN1045UFR4-7

DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits       ID TA = +25°C RDS(ON) 45mΩ @ VGS = 4.5V 64mΩ @ VGS = 2.5V 12V Low On-Resistance Low Input/Output Leakage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 3.2A NEW PRODUCT 85mΩ @ VGS = 1.8V 100mΩ @ VGS = 1.5V Mechanical Data   Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Power Management Functions  Backlighting  Load Switch     Case: X2-DFN1010-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0015 Grams (Approximate) D X2-DFN1010-3 G G ESD PROTECTED D Gate Protection Diode S S Equivalent Circuit Bottom View Pin-out Top View Ordering Information (Note 4) Notes: Part Number Case Packaging DMN1045UFR4-7 X2-DFN1010-3 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain