DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
160mΩ @ VGS = 10V
2.6A
200mΩ @ VGS = 4.5V
2.3A
V(BR)DSS
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TSOT26
making it ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.015 grams (Approximate)
UL Flammability Classification Rating 94V-0
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D
TSOT26
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H170SVT-7
DMN10H170SVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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