DMN1150UFL3-7

DMN1150UFL3 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device N-Channel Features and Benefits 2 RDS(ON) Max ID Max TA = +25°C  Footprint of just 1.3 mm  Ultra-Low Profile Package – 0.35mm Profile 150mΩ @ VGS = 4.5V 2.0A  Low Gate Threshold Voltage 185mΩ @ VGS = 2.5V 1.8A  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)   Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability BVDSS 12V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it  Case: X2-DFN1310-6 (Type B)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.002 grams (Approximate) ideal for high efficiency power management applications.    Motor Control Power Management Functions Backlighting D1 X2-DFN1310-6 (Type B) S2 G2 D1 G1 ESD PROTECTED G2 Gate Protection Diode S1 G1 S1 Q1 N-Channel D2 Top View Pin-Out Bottom View D2 Gate Protection Diode S2 Q2 N-Channel Equivalent Circuit Ordering Information (Note 4) Part Number DMN1150UFL3-7 Notes: Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain