DMN1150UFL3
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device
N-Channel
Features and Benefits
2
RDS(ON) Max
ID Max
TA = +25°C
Footprint of just 1.3 mm
Ultra-Low Profile Package – 0.35mm Profile
150mΩ @ VGS = 4.5V
2.0A
Low Gate Threshold Voltage
185mΩ @ VGS = 2.5V
1.8A
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
BVDSS
12V
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
Case: X2-DFN1310-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.002 grams (Approximate)
ideal for high efficiency power management applications.
Motor Control
Power Management Functions
Backlighting
D1
X2-DFN1310-6 (Type B)
S2
G2
D1
G1
ESD PROTECTED
G2
Gate Protection
Diode
S1
G1
S1
Q1 N-Channel
D2
Top View
Pin-Out
Bottom View
D2
Gate Protection
Diode
S2
Q2 N-Channel
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN1150UFL3-7
Notes:
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
很抱歉,暂时无法提供与“DMN1150UFL3-7”相匹配的价格&库存,您可以联系我们找货
免费人工找货