DMN1260UFA-7B

DMN1260UFA 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) max ID MAX TA = +25°C 12V 366mΩ @ VGS = 4.5V 520mΩ @ VGS = 2.5V 950mΩ @ VGS = 1.8V 1500mΩ @ VGS =1.5V 0.5A        0.4mm Ultra Low Profile Package for Thin Application 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 Low On-Resistance Low Input Capacitance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications    Mechanical Data     Load Switch Power Management Functions Portable Power Adaptors  Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (Approximate) D X2-DFN0806-3 G Gate Protection Diode Bottom View Top View Package Pin Configuration S Internal Schematic Ordering Information (Note 4) Part Number DMN1260UFA-7B Notes: Case X2-DFN0806-3 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain