DMN2004K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON)
20V
0.55Ω @ VGS = 4.5V
0.9Ω @ VGS = 1.8V
ID
TA = +25°C
630mA
410mA
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Applications
DC-DC Converters
Power Management Functions
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
Drain
D
Gate
ESD PROTECTED TO 2kV
Gate
Protection
Diode
Top View
S
G
Source
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2004K-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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