DMN2004WKQ-7

DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) max 20V 550 mΩ @ VGS = 4.5V ID TC = +25°C 0.54 mA  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability  PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Case: SOT-323  Case Material: Molded Plastic, “Green” Molding Compound.    Engine Management Systems DC-DC Converters Body Control Electronics UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020D  Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) D SOT-323 D G ESD protected Gate G TOP VIEW Gate Protection Diode S S TOP VIEW Internal Schematic Ordering Information (Note 5) Part Number DMN2004WKQ-7 Notes: Case SOT-323 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain