DMN2008LFU-13

DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V 20V        ID MAX TA = +25°C 14.5A 13.5A 13.0A 12.0A 10.5A Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance,   making it ideal for high efficiency power management applications.   Applications      Power Management Functions Battery Pack Load Switch Case: U-DFN2030-6 (Type B) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) D1 U-DFN2030-6 (Type B) G1 ESD PROTECTED G2 Gate Protection Diode Top View Pin-Out Bottom View D2 Gate Protection Diode S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2008LFU-7 DMN2008LFU-13 Notes: Case U-DFN2030-6 (Type B) U-DFN2030-6 (Type B) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain