DMN2009LSS-13

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 10A      Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 8A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS RDS(ON) max ID max TA = +25°C 8mΩ @ VGS = 10V 12A 20V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.         Backlighting Power Management Functions DC-DC Converters  SO-8 TOP VIEW Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) S D S D S D G D S (Note 4) Part Number DMN2009LSS-13 Notes: G Equivalent circuit Top View Internal Schematic Ordering Information D Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain