DMN2009USS-13

DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features BVDSS RDS(ON) Max ID Max TA = +25°C 8mΩ @ VGS = 10V 12.8A 20V 9mΩ @ VGS = 4.5V 12.1A 12mΩ @ VGS = 2.5V 10.5A        Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description and Applications   This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.       Backlighting Power Management Functions DC-DC Converters  Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 Top View S D S D S D G D Top View Internal Schematic G S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2009USS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain