DMN2010UDZ-7

DMN2010UDZ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS RDS(ON) Max 24V 7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V Features ID TA = +25°C 11.0A 10.8A 10.6A 10.5A 10.0A  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate > 2KV   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.    Mechanical Data      Applications Power Management Functions Battery Pack Load Switch Case: U-DFN2535-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) D D U-DFN2535-6 G2 2 G1 D ESD PROTECTED Gate Protection Diode Bottom View S1 Gate Protection Diode S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2010UDZ-7 Notes: Case U-DFN2535-6 Packaging 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain