DMN2011UFDE-13

DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features RDS(ON) max ID max TA = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 9.5mΩ @ VGS = 4.5V 11.7A 11mΩ @ VGS = 2.5V • Low Gate Threshold Voltage 10.8A • Low On-Resistance • ESD Protected Gate • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, • Qualified to AEC-Q101 Standards for High Reliability making it ideal for high efficiency power management applications. Mechanical Data V(BR)DSS 20V Description • • Applications • • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) • • General Purpose Interfacing Switch Power Management Functions • D U-DFN2020-6 G Pin1 ESD PROTECTED Gate Protection Diode Bottom View Pin Out Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2011UFDE-7 DMN2011UFDE-13 Notes: Marking N3 N3 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain