DMN2011UFX-7

DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features and Benefits V(BR)DSS RDS(ON) max 20V 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V        ID max TA = +25°C 12.2 A 10.4 A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it   Case: V-DFN2050-4 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.01 grams (Approximate) ideal for high-efficiency power management applications.     General Purpose Interfacing Switch Power Management Functions  G1 S1 V-DFN2050-4 D D D1/D2 G2 G1 ESD PROTECTED Gate Protection Diode Top View G2 S2 Top View Pin-Out Bottom View S1 Gate Protection Diode S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2011UFX-7 Notes: Case V-DFN2050-4 Packaging 3,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain