DMN2011UTS-13

DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V Features and Benefits RDS(ON) Max ID Max TC = +25°C 11mΩ @ VGS = 4.5V 21A 13mΩ @ VGS = 2.5V 20A       Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it   Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.039 grams (Approximate) ideal for high efficiency power management applications.      Battery Management Application Power Management Functions DC-DC Converters  D TSSOP-8 D D D D S S S G ESD PROTECTED G Gate Protection Diode Pin1 Top View Equivalent Circuit Pin Out Bottom View S Ordering Information (Note 4) Part Number DMN2011UTS-13 Notes: Case TSSOP-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain